An InGaAs P-i-N Photodiode Model: Description and Implementations in the Analysis of the 1.55 mm Lightwave System

Abstract

Using a detailed model of the InGaAs P-i-N photodiode that includes effects caused by the change of bias voltage and effects of the RC parasitic constant, authors describe the implementation of the pulse response of the P-i-N photodiode in the lightwave system model obtaining greater accuracy in comparison to an ideal square-law detector or to the simplified one-pole P-i-N photodiode model. Developed method has been used for the evaluation of the 10 Gbit/s 1.55 μιη IM/DD (Intensity Modulation/Direct Detection) digital optical system performance with InGaAs P-i-N photodiode as an optical receiver. The authors also propose the correction factor, the photodiode bandwidth penalty, in the total optical system penalty that describes the influence of the P-i-N photodiode properties on the optical system performance.

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

“…A numerical analysis on the non-linear response of InGaAs-based photodiode at high illumination conditions was also performed previously (Dentan & Cremoux, 1990). A numerical model for an InGaAs-based p-i-n photodiode which utilizes the pulse response equation was developed by Cvetkovic et al (2000). Software such as SPICE and MATLAB has also been utilized previously to perform numerical simulation on p-i-n photodiodes (Parker, 1988;Loo, 2007).…”