An increased F2-laser damage in ‘wet’ silica glass due to atomic hydrogen: A new hydrogen-related E′-center

Skuja, Linards; Kajihara, Koichi; Hirano, Masahiro; Saitoh, Akira; Hosono, Hideo

doi:10.1016/j.jnoncrysol.2006.01.101

Cited by 37 publications

(22 citation statements)

References 16 publications

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“…The calculated average values of hyperfine splitting on Si, the nearest neighbor O ions and H of the O-H group are 48.4 mT, 3.0 mT and 0.1 mT, respectively. We note that the hydroxyl E center may be equivalent to the E (OH)-center proposed in [30] as both centers have very similar hyperfine splittings on the H atom. However, our calculations demonstrate a wider spread of H hyperfine values (0.05-0.15 mT) due to the mobility of the O-H group (see figure 2a).…”

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confidence: 78%

“…Under ArF or F 2 laser irradiation, high concentrations of H 0 are photolytically generated. Atomic hydrogen is found to easily diffuse through the silica network with activation energies of 0.1-0.2 eV [4,5], but a number of H-related defects have also been detected after irradiation [28][29][30][31]. In particular, a 0.08 mT doublet due to proton hyperfine splitting has been assigned to a Si dangling bond coordinated by two bridging oxygens and an OH group.…”

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confidence: 99%

“…In particular, a 0.08 mT doublet due to proton hyperfine splitting has been assigned to a Si dangling bond coordinated by two bridging oxygens and an OH group. This center is thought to result from the interaction of H 0 with electronically excited strained Si-O bonds [30]. Strained Si-O bonds in amorphous silica, that is those bonds whose length deviates strongly from the crystalline equilibrium value of 1.61Å, have been the focus of many other studies due to their relatively high reactivity [30,[32][33][34][35][36].…”

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confidence: 99%

“…This center is thought to result from the interaction of H 0 with electronically excited strained Si-O bonds [30]. Strained Si-O bonds in amorphous silica, that is those bonds whose length deviates strongly from the crystalline equilibrium value of 1.61Å, have been the focus of many other studies due to their relatively high reactivity [30,[32][33][34][35][36]. However, reactions of atomic hydrogen with strained Si-O bonds have not been investigated theoretically, except in [32], and the perception that atomic hydrogen interacts only weakly with the silica network still prevails in the literature [1, 7,37].…”

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confidence: 99%

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Hydrogen-Induced Rupture of Strained Si─O Bonds in Amorphous Silicon Dioxide

et al. 2015

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Using ab initio modeling we demonstrate that H atoms can break strained Si-O bonds in continuous amorphous silicon dioxide (a-SiO2) networks, resulting in a new defect consisting of a 3-coordinated Si atom with an unpaired electron facing a hydroxyl group, adding to the density of dangling bond defects, such as E centers. The energy barriers to form this defect from interstitial H atoms range between 0.5 and 1.3 eV. This discovery of unexpected reactivity of atomic hydrogen may have significant implications for our understanding of processes in silica glass and nano-scaled silica, e.g., in porous low-permittivity insulators, and strained variants of a-SiO2.

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confidence: 78%

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confidence: 99%

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confidence: 99%

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Hydrogen-Induced Rupture of Strained Si─O Bonds in Amorphous Silicon Dioxide

et al. 2015

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“…Hydrogen can also enhance the diffusivity of impurities or other interstitial atoms such as oxygen by forming water molecules. Water molecules are known to form silanol (≡Si−O−H) groups even at room temperature [3,4]:…”

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confidence: 99%

Mechanism of radiation‐induced defects in SiO₂: The role of hydrogen

Salh

Fitting

2007

Phys. Status Solidi (c)

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Hydrogen related defects in anhydrous "dry", hydrated "wet" and hydrogen implanted amorphous silicon dioxide (a-SiO 2 ) layers are investigated using cathodoluminescence (CL) technique in a wave length range 200-800 nm at specimen temperatures between room and liquid nitrogen temperature. Particular defect centers have been identified including the non-bridging oxygen hole center (NBOHC) associated with the red luminescence at 650 nm (1.9 eV) and the oxygen deficient centers (ODCs) with the blue (460 nm; 2.7 eV) and UV band (290 nm; 4.3 eV). An additional luminescence band Y in the greenyellow region has been clearly detected in hydrogen-implanted as well as in oxygen-deficient samples. The red luminescence shows quite different CL dose behavior in wet and hydrogen-treated samples due to dissociation and re-association of mobile hydrogen and oxygen from and to the NBOHC. The yellow luminescence at 580 nm (2.1 eV) is discussed in terms of radiolytic water dissociation as well as of ODC's in form of small silicon aggregates in the silica matrix.

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