An in-situ laser-light scattering study of the development of surface topography during GaAs and InxGa1 − xAs chemical beam epitaxy

Boyd, A.R.; Joyce, Tim; Beanland, Richard

doi:10.1016/0022-0248(95)01074-2

Cited by 10 publications

(3 citation statements)

References 22 publications

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“…An in situ laser light scattering ͑LLS͒ technique is used to monitor the evolution of the surface roughness in real time. LLS is a valuable technique for checking surface morphology evolution during epitaxial growth, 3,[12][13][14][15] since the LLS intensity is related to the mean surface roughness. 16,17 The surfaces generated during epitaxial growth are highly smooth, thus allowing that the LLS technique is sensitive to surface features as small as nanometers in height.…”

Section: Introductionmentioning

confidence: 99%

In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

González¹,

González²,

González³

et al. 2001

Journal of Applied Physics

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Using real-time in situ laser light scattering we study, in this work, the influence of growth kinetics on the initial development of the crosshatched morphology and its subsequent evolution. The crosshatched morphology is characteristic of relaxed low strained layers ͑Ͻ 2%͒ and has been traditionally related to the plastic relaxation process driven by generation and multiplication of dislocations. However we have observed that, if the growth rate is slow enough, the onset of crosshatch formation takes place at a layer thickness in which the dislocation formation and multiplication processes have not appeared yet. This reveals that the stress field generated by the small density of misfit dislocations formed by bending of the dislocations preexisting in the substrate is strong enough to affect the evolution of the growth front morphology. Our results also show that the starting point and evolution of this characteristic morphology depend on the growth rate in such a way that when the growth rate is lower the crosshatched morphology starts to develop at a smaller thickness and shows a faster evolution rate.

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Section: Introductionmentioning

confidence: 99%

In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

González¹,

González²,

González³

et al. 2001

Journal of Applied Physics

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“…As demonstrated, [13][14][15][16][17] LLS is a powerful technique for in situ monitoring of surface evolution during growth. However, its implementation is complicated by geometrical restrictions imposed by the growth reactor, which does not usually allow obtainment of the full spatial distribution of the scattered intensity.…”

Section: Introductionmentioning

confidence: 99%

Polarized laser light scattering applied to surface morphology characterization of epitaxial III–V semiconductor layers

González

Sánchez‐Gil

González

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inDual-superlattice calibrations for group-III species in III-V semiconductor epitaxial structure growth J. Vac. Sci. Technol. B 32, 041205 (2014); 10.1116/1.4887482 Molecular-beam epitaxial growth of III-V semiconductors on Ge ∕ Si for metal-oxide-semiconductor device fabrication Appl. Phys. Lett. 92, 203502 (2008); 10.1063/1.2929386In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In 0.2 Ga 0.8 As/GaAs A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces Rev. Sci. Instrum. 71, 504 (2000)

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“…Even though this technique is particularly efficient for the early stage of the growth of thin layers up to a few tens of monolayers, direct evaluation of the oxidation state is not possible. Optical methods such as spectral ellipsometry [4][5][6], reflectance difference spectroscopy (RDS) [7][8][9][10][11][12], p-polarized reflection spectroscopy (PRS) [13][14][15][16], and laser light scattering [17,18], have demonstrated their abilities in monitoring film thickness, optical properties, chemical composition, and surface structures. In the meantime an original approach has been suggested and applied by Zhu and coworkers [19] to monitor the homo-and more recently heteroepitaxial growth of perovskites deposited on single substrates of SrTiO 3 .…”

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confidence: 99%

In situ monitoring of La_0.67Sr_0.33MnO₃ monolayers grown by pulsed laser deposition

Esteve

Postava

Gogol

et al. 2010

Physica Status Solidi (b)

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Integration of functional oxides on silicon is a key issue for the development of oxide-based electronics. For this purpose, monitoring the growth of these materials by an in situ technique becomes essential to control the thickness, the roughness and the oxidation state of the layers. Using a new static optical setup, i.e. with no modulation, we have studied the deposition and the annealing of pulsed-laser deposited La 0.67 Sr 0.33 MnO 3 monolayers on pseudosubstrates SrTiO 3 (100)/Si at high temperature. We show that using the ratio of reflectance for the two different polarizations (s,p) R p /R s ¼ tan 2 c of the optical signal after reflection, we can follow, in situ, the growth of monolayers (ML) with a precision of one unit cell. Also, the growth mode and the annealing process leading to the determination of the activation energy can be precisely controlled. All these results are corroborated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Using this static measurement method, the obtained results are as sensitive as previous reports with, for example, oblique incidence reflectivity difference (OI-RD).

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An in-situ laser-light scattering study of the development of surface topography during GaAs and InxGa1 − xAs chemical beam epitaxy

Cited by 10 publications

References 22 publications

In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

Polarized laser light scattering applied to surface morphology characterization of epitaxial III–V semiconductor layers

In situ monitoring of La_0.67Sr_0.33MnO₃ monolayers grown by pulsed laser deposition

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An in-situ laser-light scattering study of the development of surface topography during GaAs and InxGa1 − xAs chemical beam epitaxy

Cited by 10 publications

References 22 publications

In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

Polarized laser light scattering applied to surface morphology characterization of epitaxial III–V semiconductor layers

In situ monitoring of La0.67Sr0.33MnO3 monolayers grown by pulsed laser deposition

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In situ monitoring of La_0.67Sr_0.33MnO₃ monolayers grown by pulsed laser deposition