2020
DOI: 10.1016/j.cjph.2020.08.007
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An in-depth investigation of physical properties of Nd doped CdS thin films for optoelectronic applications

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Cited by 18 publications
(8 citation statements)
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“…The depicted samples exhibited band edge emission around 455 nm, and this is a phenomenon resulting from the recombination of excited electrons that become trapped at shallow levels, forming bound electron–hole pairs. On the other hand, the peak at 658 nm is associated with sulfur vacancies induced by doping, occurring at the transition level. , The significant peak observed at 490 nm may arise from interband transitions, which could result from sulfur-vacancy donors transitioning to the valence band and donor–acceptor recombination. The peak at 581 nm is likely influenced by interstitial defects present in the material.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The depicted samples exhibited band edge emission around 455 nm, and this is a phenomenon resulting from the recombination of excited electrons that become trapped at shallow levels, forming bound electron–hole pairs. On the other hand, the peak at 658 nm is associated with sulfur vacancies induced by doping, occurring at the transition level. , The significant peak observed at 490 nm may arise from interband transitions, which could result from sulfur-vacancy donors transitioning to the valence band and donor–acceptor recombination. The peak at 581 nm is likely influenced by interstitial defects present in the material.…”
Section: Resultsmentioning
confidence: 99%
“…On the other hand, the peak at 658 nm is associated with sulfur vacancies induced by doping, occurring at the transition level. 57 , 58 The significant peak observed at 490 nm may arise from interband transitions, which could result from sulfur-vacancy donors transitioning to the valence band and donor–acceptor recombination. The peak at 581 nm is likely influenced by interstitial defects present in the material.…”
Section: Resultsmentioning
confidence: 99%
“…[ 50 ] The information about the spin–phonon interaction coupling at the surface of the thin films could be obtained by the reciprocal of Q . [ 51 ] The estimated values of Q are included in Figure 11. The value of Q signifies a higher crystal quality with a stronger electron–phonon coupling, which is found for the Cu‐5 sample among the CMZS thin films.…”
Section: Resultsmentioning
confidence: 99%
“…[34] The structure of CdS possesses intensity optical properties due to their good interaction with light and provides significant advantage to semiconductor which is important for photoluminescence and other optical properties. [35][36][37] The element structure of RE elements is the same at their outer shell (5s 2 , 5p 6 , 6s 2 ) and differs only by electrons in the partially filled inner 4f shell.…”
Section: Applicationsmentioning
confidence: 99%