An improvement method for the reliability of copper metallization process

Abstract

In this study, a capping layer was deposited after CMP polish when finish the SiO 2 layer. These interrelated problems can be solved with a proper fabrication process strategy.This effective strategy will eliminate copper extrusion using in many semiconductor processes. Stronger interface reduce the diffusion of Cu through IMD. Linewidth(um) Effective Resistivity (u ohms-cm) Reduce 3%Grain size = 0.42um ControlGrain size = 0.42um ControlGrain size = 0.56um Optimized thermal budgeGrain size = 0.56um Optimized thermal budge