Micro & Optical Tech Letters
 2021
DOI: 10.1002/mop.33032
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An improved transistor noise equivalent circuit model for silicon‐on‐insulator transistors considering the frequency dispersion effect

Xingzheng Du
1
,
Xin Cao
2
,
Huihua Liu
3

Abstract: How to cite this article: Du X, Cao X, Liu H. An improved transistor noise equivalent circuit model for silicon-on-insulator transistors considering the frequency dispersion effect.

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