An improved small‐signal equivalent circuit model for 4H‐SIC power mesfets

Abstract

attractive that single-to-multiple channel wavelength conversion can be potentially implemented by appropriately changing the number of the CW waves. For this fiber, the dispersion changes is very small over a wavelength range of over 100 nm, the quasi phase matching is maintained automatically. Therefore, it is expected that MF will play an important role in wavelength conversion, especially in single-to-multiple channel wavelength converter. circuit (CSEC). And a new extraction procedure for the modified SEC parameters is also proposed. The calculated S-parameters using the modified SEC model (MSEC) fit the measured ones very well up to 20 GHz. ABSTRACT: The frequency-dependence of parasitic resistances (R s and R d ) for 4H-SiC power MESFETs is empirical modeled by adding two disperse parameters based on conventional small-signal equivalent

Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

“…Therefore, it is a suitable feature to check the consistency of values obtained by optimization based extractions. The obtained S‐parameters are also consistent with similar device results presented in earlier publications …”

“…This enables to differentiate between bias‐dependent and bias‐independent parameters and it can account for different bias conditions. Therefore, it is suggesting to consider at least two bias conditions to attain a robust extraction . The intrinsic parameters can be calculated from the intrinsic admittance parameters after de‐embedding the extrinsic parameters contribution at different bias condition.…”

“…As the SSEC model connects the physical device structure to its circuit analysis, it enables study of the microwave and RF performance with device geometrical parameters. In this case, different procedures have been proposed to extract the SSEC parameters of microwave heterostructure devices from S‐parameters. During working with S‐parameters at higher frequencies require accurate transistor models up to micro/millimeter‐wave frequencies.…”

“…These effects are related to the time constants showing the inertia of the intrinsic device in responding to abrupt signal changes. Various circuit topologies have been developed to show the intrinsic nonquasi static effects . These developments show the differences among the different materials, device technologies, structures, and frequency ranges.…”

LARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT

“…In order to improve the optimization efficiency and accuracy, the optimization ranges and steps of the seven ratio parameters (a, b, c, d, e, x, g) are set to reasonable values. The simple genetic algorithm (GA) is used as the optimization algorithm [15]. The extracted parameters are shown in Table 1, and good agreements are achieved between measurement results and calculated results (shown in Fig.…”