An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation

Hossain, Maksudul; Ceccarelli, Lorenzo; Rashid, Arman Ur; Kotecha, Ramchandra; Mantooth, H. Alan

doi:10.1109/iecon.2018.8592522

Cited by 16 publications

(8 citation statements)

References 9 publications

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“…In addition to capacitance-defined implementations, multiple interelectrode capacitance implementations use a chargedefined function (fq) [13], [16], [17], [21]. Such models can be implemented in SPICE through the SDI shown in Fig.…”

Section: B Implementing Voltage Dependent Capacitance In Spicementioning

confidence: 99%

“…Such models can be implemented in SPICE through the SDI shown in Fig. 3(d), which takes the derivative of charge function directly [13]. Fig.…”

Section: B Implementing Voltage Dependent Capacitance In Spicementioning

confidence: 99%

“…3. Five implementations of voltage-dependent capacitance between nodes N1 and N2 that are suited for SiC MOSFET interelectrode capacitances: (a) nonlinear mapping implementation with external capacitor [11], [32], (b) nonlinear mapping implementation with in-line capacitor [12], (c) simple derivative implementation with capacitance definition [32], (d) simple derivative implementation with charge definition [13], (e) charge-defined capacitor implementation [21]…”

Section: Models Selected For Trade Studymentioning

confidence: 99%

“…1(a) shows a time-domain comparison of these models during a turn-off transient event, and includes the manufacturer's model for reference. In this comparison are two behavioral models -the non-segmented model [11] and the modified Curtice model [12] -and a physics model [13]. While these three models were fit to the same characterization data, this comparison shows a wide variance between the model predictions.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Dynamic Behavior

Nelson

Lemmon

Jimenez

et al. 2021

IEEE Open J. Power Electron.

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Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Transistor models presented for SPICE are often evaluated by accuracy, with less consideration for the computational cost of model elements. In order to optimize models for application simulations, this research quantifies the relative simulation performance of modeling approaches and contextualizes the results with regard to accuracy. It is well established that the primary contributor to semiconductor dynamic behavior is the voltage-dependent interelectrode capacitances. Therefore, this study isolates these model components to resolve their influence on model accuracy and runtime. Both the voltage-dependencies modeled, and the mathematic formulation chosen strongly influence the accuracy of interelectrode capacitance models. In addition to these factors, the specific implementation chosen within SPICE also determines simulation performance. Through careful evaluation of these factors, this study offers specific recommendations for optimal implementations of interelectrode capacitances in SPICE.

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Section: B Implementing Voltage Dependent Capacitance In Spicementioning

confidence: 99%

“…Such models can be implemented in SPICE through the SDI shown in Fig. 3(d), which takes the derivative of charge function directly [13]. Fig.…”

Section: B Implementing Voltage Dependent Capacitance In Spicementioning

confidence: 99%

Section: Models Selected For Trade Studymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Dynamic Behavior

Nelson

Lemmon

Jimenez

et al. 2021

IEEE Open J. Power Electron.

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“…The fourth and final model selected, referred to as the physics model throughout this discussion, was presented by Hossain et al in [46]. The physics model was adapted for LTspice from Mudholkar's Saber model presented in [47].…”

Section: Ieee Open Journal Of Power Electronicsmentioning

confidence: 99%

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

Nelson

Lemmon

Jimenez

et al. 2020

IEEE Open J. Power Electron.

Self Cite

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Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead emphasizes detail, physical accuracy, and complexity. While these advancements greatly improve model accuracy, they also serve to increase computational complexity, making the resulting models less attractive to application designers. While some authors depart from this trend and present models which emphasize simulation speed, their results and analysis are limited to qualitative observation. This research develops a methodology to quantify the computational cost of model features and competitively benchmark models against each other. Additionally, it reviews recently published SiC MOSFET models and presents a trade study on several candidate models likely to fare well in complex application simulations. Finally, this study also identifies key considerations which should be carried forward into future model design.

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Improved simulation modelling and its verification for SiC MOSFET

Yang

Wang

Ding

et al. 2022

IET Power Electronics

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Of crucial importance is to accurately simulate its switching characteristics for the application of SiC MOSFET. Due to the ultrafast switching capability, SiC MOSFET is dependent on interelectrode capacitances and extremely sensitive to parasitics. Therefore, accurate modelling of interelectrode capacitances and knowledge of parasitics are required. Here, an improved SiC MOSFET model driven by an empirical formula with three segments for the non-linear drain-to-gate capacitance in relationship with the drain-to-source voltage is developed. In this way, the capacitance fitting at the inflection point that has a great impact on the switching delay is much improved. By simple self-made high-voltage C-V measurement systems, the accuracy of the proposed formula is verified. More importantly, intruded parasitics by the commonly-used coaxial shunt current measurement loop is analysed in detail. The equivalent circuit of the current measurement loop is incorporated into the device simulation circuit to compensate measurement errors. In this way, the improved model can be more reliably verified and evaluated. A double pulse test is built to verify the proposed model. By comparison of simulation and experimental results, the proposed model works well at different voltage and current operating conditions and offers a reliable and accurate modelling approach.

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An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation

Cited by 16 publications

References 9 publications

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Dynamic Behavior

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Dynamic Behavior

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

Improved simulation modelling and its verification for SiC MOSFET

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