An Improved Interleaved DC-DC SEPIC Converter Based on SiC-Cascade Power Devices for Renewable Energy Applications

Alharbi, Salah S.; Alharbi, Saleh S.; Matin, Mohammad A.

doi:10.1109/eit.2018.8500294

Cited by 4 publications

(5 citation statements)

References 24 publications

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“…The initial step in calculating the thermal impedance curve involves converting the cooling curve into the heating curve using Equation (1). Subsequently, the thermal impedance curve is derived by applying Equation (2).…”

Section: Thermal Impedance Measurementmentioning

confidence: 99%

“…In the pursuit of global efforts toward developing clean energy sources, the proportion of renewable energy sources, including wind and photovoltaic power, in the power grid is escalating, paralleled by a remarkable surge in the installed capacity of these units [1,2]. According to the latest data released by the International Energy Agency (IEA) in June 2023, global renewable energy capacity additions are anticipated to surge to 550 GW in 2024, necessitating the integration of an increasing amount of renewable energy into the grid via converters.…”

Section: Introductionmentioning

confidence: 99%

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Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Huang,

Singh,

Liu

et al. 2024

Energies

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Silicon carbide (SiC)-based metal–oxide–semiconductor field-effect transistors (MOSFETs) hold promising application prospects in future high-capacity high-power converters due to their excellent electrothermal characteristics. However, as nascent power electronic devices, their long-term operational reliability lacks sufficient field data. The power cycling test is an important experimental method to assess packaging-related reliability. In order to obtain data closest to actual working conditions, forward power cycling is utilized to carry out SiC MOSFET degradation experiments. Due to the wide bandgap characteristics of SiC MOSFETs, the short-term drift of the threshold voltage is much more serious than that of silicon (Si)-based devices. Therefore, an offline threshold voltage measurement circuit is implemented during power cycling tests to minimize errors arising from this short-term drift. Different characterizations are performed based on power cycling tests, focused on measuring the on-state resistance, thermal impedance, and threshold voltage of the devices. The findings reveal that the primary failure mode under forward power cycling tests, with a maximum junction temperature of 130 ∘C, is bond-wire degradation. Conversely, the solder layer and gate oxide exhibit minimal degradation tendencies under these conditions.

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Section: Thermal Impedance Measurementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Huang,

Singh,

Liu

et al. 2024

Energies

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show abstract

“…Isolated SEPIC converter using GaN switch with 2 MHz switching frequency is presented in Xu et al (2017). Alharbi et al (2018) realizes interleaved SEPIC converter by using SiC power switch for renewable application. In order to improve power density of high switching frequency SEPIC converter using GaN switch with PCB embedded inductor is presented in Dou et al (2018).…”

Section: Introductionmentioning

confidence: 99%

“…Most of the studies defined in references realized the usage of the GaN switch with higher frequency such as 500kHz-2Mhz as in Saif et al (2017), Xu et al (2017), Gao et al (2019) and more than 12V output voltage with relatively higher power than 10W as in Gao et al (2020), Saif et al (2017), Alharbi et al (2018), Maharjan et al (2017), Gao et al (2019). However, in this paper, SEPIC converter based led driver application for up to 10W power with up to 12V output voltage is realized by using Si MOSFET and E-Mode GaN-HEMT based power switches.…”

Section: Introductionmentioning

confidence: 99%

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Si ve GaN Yarı İletken tabanlı SEPIC DC-DC Led Sürücülerin Karşılaştırılması

Şehirli¹

2020

European Journal of Science and Technology

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Recently, in power electronics, studies on creating new semiconductor concept is so popular. As a result of this studies, using of wide band gap semiconductors (WBG) such as Silicon Carbide (SiC) Mosfets and Gallium Nitride High Electron Mobility Transistors (GaN-HEMT) has gained much attention due to the its high switching frequncy capability and providing high power density feature. Furthermore, in the field of illumination, power leds is so eye cathing because of their high efficinecy feature with respect to other kind of illumination such as metal halide and incandesant bulbs. In addition, to operate power leds, DC power is required and the most efficient way to provide required DC power is to use one of the DC-DC converter topologies. Buck-boost derived converter topology is the best solution fort that purpose. One of the flashiest topologies is single ended primary inductor (SEPIC) converter. Therefore, in this paper, comparison of SEPIC DC-DC converter-based power led driver using silicon (Si) and enhancement mode (E-mode) GaN-HEMT based power switch is made. Also, SEPIC led drivers are designed for 10W power led and implementations for both power switches are realized. In addition, switching frequency of converters is chosen as 100kHz and dsPIC30F4011 micro controller is used to produce PWM signal for power switches and to limit maximum current of power leds by using ACS712 current sensor. By means of the applications, power led current, power led voltage, input current, input voltage and input side inductor current, switch voltage, gate resistor voltage are measured and compared for both Si and GaN based power switches. As a result of comparisons, altough similar results are obtained, circuit using Si MOSFET has slightly higher efficiency than E-Mode GaN-HEMT used circuit. Besides, circuit using E-Mode GaN-HEMT is more sensitivity to the noises and needs extra care for its soldering.

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Efficiency comparison of silicon and silicon carbide MOSFETs in a PV system application

Bouchetob

Nadji

Mahdi

2023

2023 International Conference on Advances in Electronics, Control and Communication Systems (ICAECCS)

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An Improved Interleaved DC-DC SEPIC Converter Based on SiC-Cascade Power Devices for Renewable Energy Applications

Cited by 4 publications

References 24 publications

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Si ve GaN Yarı İletken tabanlı SEPIC DC-DC Led Sürücülerin Karşılaştırılması

Efficiency comparison of silicon and silicon carbide MOSFETs in a PV system application

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