An improved fully integrated, high-speed, dual-modulus divider

Abstract

A fully integrated 2 n /2 n +1 dual-modulus divider in GHz frequency range is presented. The improved structure can make all separated logic gates embed into correlative D flip-flops completely. In this way, the complex logic functions can be performed with a minimum number of devices and with maximum speed, so that lower power consumption and faster speed are obtained. In addition, the low-voltage bandgap reference needed by the frequency divider is specifically designed to provide a 1.0 V output. According to the design demand, the circuit is fabricated in 0.18 m standard CMOS process, and the measured results show that its operating frequency range is 1.1-2.5 GHz. The dual-modulus divider dissipates 1.1 mA from a 1.8 V power supply. The temperature coefficient of the reference voltage circuit is 8.3 ppm/ ı C when the temperature varies from 40 to C125 ı C. By comparison, the dual-modulus divide designed in this paper can possess better performance and flexibility.