An improved forward I-V method for nonideal Schottky diodes with high series resistance

Lien, Chuen‐Der; So, F. C. T.; Nicolet, M.‐A.

doi:10.1109/t-ed.1984.21739

Cited by 133 publications

(46 citation statements)

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“…The Lien method [8] is based on the construction of several Norde-like functions of the form, where γ is an arbitrary parameter, γ > n. From these curves, the current value I min can be obtained, when G(I min ) is minimal. For V > 3kT/q, taking the series resistance into account, the formula (1) can be rewritten as follows:…”

Section: Calculation Of Barrier Parameters From Current-voltage Charamentioning

confidence: 99%

“…A number of methods for their determination, including determination from the current-voltage characteristic, is well known [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Attempts to generalize and systematize the existing methods were made in a number of papers [1][2][3][4], but estimation of accuracy, carried out in the most of works, does not take into account the peculiarities of contacts to wide-gap semiconductors.…”

Section: Introductionmentioning

confidence: 99%

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Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics

Ya¹,

Lashkaryov²

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au-TiB 2 -n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. Improving the accuracy of the methods that take into account the effect of the series resistance in calculating the ideality factor and barrier height has been shown with the Cheung method and direct approximation one. It has been ascertained that an inconsistency between real currentvoltage characteristics and its model -the temperature dependence of the barrier height, the ideality factor dependence on the voltage -introduces the basic error into the calculated parameters in the diode under study.

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Section: Calculation Of Barrier Parameters From Current-voltage Charamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics

Ya¹,

Lashkaryov²

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Forward and reverse I-V measurements were used to evaluate the SBH of the diodes. In cases where only a limited range oflinearity was measured in the forward diode characteristics due to series resistance effect, the Norde method 9 or the improved Norde method 10 were applied to check the barrier height. The temperature during these measurements was ~ 22 ·c.…”

Section: Methodsmentioning

confidence: 99%

Formation and electrical properties of Hf Si2 grown thermally from evaporated Hf and Si films

So¹,

Lien²,

Nicolet³

1985

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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MeV4 He+ backscattering spectrometry and x-ray diffraction have been used to study HfSi 2 formed by thermal annealing of a Hf Si film on evaporated Si (Si•) at temperatures between 575 and 650 ·c. A laterally uniform layer of Hf Si 2 forms and its thickness is proportional to the square root of time at a fixed temperature. The activation energy of this reaction is found to be 3.5 ± 0.3 eV. This transport-limited process differs from that observed on single crystal Si, where Hf Si 2 forms at temperatures above 700 ·c by a process believed to be nucleation controlled. Fourpoint probe measurements of resistivity and Hall coefficient at room temperature on samples with both Hf Si and Hf Si 2 were used to determine that both Hf Si and Hf Si 2 are electron conductors.For HfSi 2 , the electron concentration is 2.9 ± 0.2X 10

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“…The I-V characteristic showed a high series resistance because of the low conductivity of both PPy and lightly doped p-type silicon. Hence a modified Norde method (Lien et al 1984;Aubry and Meyer 1994) was used to help predict Rs, and n. The dots in Fig. 5b are the I 0c -c curve obtained following the idea of (Lien et al 1984), and the plot of I 0c vs. c (Fig.…”

Section: (B) (A)mentioning

confidence: 99%

Generation of micropatterns of conducting polymers and aluminum using an intermediate-layer lithography approach and some applications

Luo

2009

Microsyst Technol

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Conducting polymers, because of their promising potential to replace silicon and metals in building devices, have attracted great attention since the discovery of high conductivity in doped polyacetylene in 1977. Lithographic techniques present significant technical challenges when working with conducting polymers. Sensitivity of conducting polymers to environmental conditions (e.g., air, oxygen, moisture, high temperature, and chemical solutions) makes current photolithographic methods unsuitable for patterning the conducting polymers due to the involvement of wet and/or dry etching processes in those methods. Existing non-photolithographic approaches have limitations in throughput, resolution, or electrical insulation. Therefore, an intermediate-layer lithography (ILL) approach has been recently developed by my group to produce conducting polymer micro/nanostructures. In the ILL method, an intermediate layer of an electrically insulating polymer is coated between the substrate and a layer of the conducting polymer to be printed. Subsequently, the conducting polymer is printed through mold insertion using a hot-embossing process. The current hotembossing based methods face the obstacles of residual layer and depth of field (i.e., the height variation in the mold structures). In contrast, the ILL approach does not leave a residual layer in the material of interest, making conducting polymer patterns isolated from one another and avoiding the shorting problem in the electrical applications of these patterns. Furthermore, in the ILL, the height variation potentially existing among the mold structures has been transferred to the intermediate layer, ensuring that all patterns in the mold have been properly transferred to the conducting polymer layer. In addition to conducting polymers, the ILL can also be applied to pattern metals as well as other types of polymers. This paper gives a review of this ILL method and reports the results that we have achieved to date, including generation and applications of single and multiple layers of microstructures of conducting polymers and aluminum.

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An improved forward I-V method for nonideal Schottky diodes with high series resistance

Cited by 133 publications

References 1 publication

Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics

Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics

Formation and electrical properties of Hf Si2 grown thermally from evaporated Hf and Si films

Generation of micropatterns of conducting polymers and aluminum using an intermediate-layer lithography approach and some applications

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