An Improved Drain-source Capacitance Characterization Method for SiC MOSFET Switching Performance Prediction

Li, Huaqing; Yang, Chengzi; Zhu, Mengyu; Feng, Shuting; Kong, Hang; Wu, Sheng-Hai; Wang, Laili

doi:10.1109/ecce-asia49820.2021.9479459

2021 IEEE 12th Energy Conversion Congress &Amp; Exposition - Asia (ECCE-Asia) 2021

DOI: 10.1109/ecce-asia49820.2021.9479459

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An Improved Drain-source Capacitance Characterization Method for SiC MOSFET Switching Performance Prediction

Huaqing Li

Chengzi Yang

Mengyu Zhu

et al.

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An Improved Drain-source Capacitance Characterization Method for SiC MOSFET Switching Performance Prediction

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