An improved deep sub-micron MOSFET RF nonlinear model with new breakdown current model and drain to substrate nonlinear coupling

Heo, Deukhyoun; Gebara, E.; Chen, E.; Yoo, Seung Joon; Hamai, M.; Laskar, J.

doi:10.1109/mwsym.2000.863289

Cited by 5 publications

(3 citation statements)

References 24 publications

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“…Since the minimum feature size of complementary metaloxide-semiconductor (CMOS) devices has been scaled down to the nanoscale regime, the radio-frequency (RF) performance of silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFETs) has markedly improved, [1][2][3][4][5][6][7][8][9][10][11][12] and is now comparable to that of compound semiconductor transistors based on GaAs and GaN. [13][14][15][16][17][18][19] Recently, a compact model and a parameter extraction method have been developed intensively for Si RF MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis

Kim

Shin

Cho

et al. 2013

Jpn. J. Appl. Phys.

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In this work, we present a novel analytical method based on radio-frequency (RF) analysis for the accurate and reliable extraction of source and drain (S/D) series resistances in silicon nanowire (SNW) metal–oxide–semiconductor field-effect transistors (MOSFETs). The proposed method provides decomposed RF model equations for the gate-bias-independent off-state and gate-bias-dependent on-state components from both Y- and Z-parameters. The validity of our extraction method for S/D series resistances in SNW MOSFETs has been carefully tested in comparison with that of a previously reported method as well as with the physical three-dimensional (3D) device simulation. The schematically modeled Y- and Z-parameters have demonstrated excellent agreement with the numerical 3D device simulation results for various SNW MOSFET structures up to the 100 GHz frequency regime.

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Section: Introductionmentioning

confidence: 99%

Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis

Kim

Shin

Cho

et al. 2013

Jpn. J. Appl. Phys.

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“…[1][2][3][4][5][6][7] Over the past decades, however, the minimum feature size of complementary metal-oxide-semiconductor (CMOS) devices has been continuously reduced and the high-frequency performance of MOS transistors has been markedly improved. [8][9][10][11][12][13][14][15][16][17] To apply metal-oxide-semiconductor field-effect transistors (MOSFETs) to the RF circuit design, an accurate compact model and a good parameter extraction method for highly scaled RF MOSFETs should be developed preferentially. [18][19][20][21][22][23][24] In this regard, substrate resistance components are very important parameters in the RF IC design since they have a large influence on the output admittance of RF MOSFET.…”

Section: Introductionmentioning

confidence: 99%

Extraction of T-Type Substrate Resistance Components for Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistors Based on Two-Port S-Parameter Measurement

Kang

Cho

Shin

2012

Jpn. J. Appl. Phys.

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In this paper, we present an analytical parameter extraction method for the T-type substrate network (substrate resistance components) of RF metal–oxide–semiconductor field-effect transistors (MOSFETs) based on simple two-port S-parameter measurements. To improve the accuracy of the parameter extraction, the electrode resistance components of the gate, source, and drain regions are used in the equivalent circuit model of RF MOSFETs in the off-state. The values of the substrate resistance components are extracted directly from the two-port S-parameter measurement data and not from the existing complex three- or four-port measurement, and their scalability according to device geometry is excellent. Using the proposed small-signal circuit and extracted parameters, it is verified that the output admittances of MOSFETs are successfully modeled up to 40 GHz. The verification was performed by a comparison of simulated and measurement data for 130-nm-technology-node complementary metal–oxide–semiconductor (CMOS) devices.

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“…The breakdown voltage has also been experimentally found to depend upon RF conditions. It has been observed that under large-signal high-frequency conditions, devices can be driven beyond their DC breakdown limits [19,20]. The breakdown voltage under RF conditions is higher than that under DC conditions, thus implying that the maximum output power can be greater under RF excitation.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zinc-blende-phase MESFETs (metal-semiconductor field-effect transistors)

Farahmand¹,

Weber

Tirino

et al. 2001

J. Phys.: Condens. Matter

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In this paper, we present a comparison of the direct-current (DC) and radio-frequency (RF) breakdown behaviours of representative wurtzite- and zinc-blende-phase GaN MESFET structures based on a theoretical analysis. The calculations are made using a full-band ensemble Monte Carlo simulation that includes a numerical formulation of the impact ionization transition rate. Calculations of both the DC and RF breakdown voltages are presented for submicron MESFET devices made from either wurtzite- or zinc-blende-phase GaN. The devices are otherwise identical. It is found that the DC breakdown voltage in the wurtzite-phase GaN MESFET is significantly larger than that in the zinc-blende-phase device. This is due to the fact that electron heating occurs more rapidly within the zinc-blende phase than the wurtzite phase of GaN. As a consequence, avalanche breakdown occurs at higher applied field strengths and voltages in the wurtzite phase than in the zinc-blende phase of GaN. It is further found that the RF breakdown voltage of the devices increases with increasing frequency of the applied large-signal RF excitation.

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An improved deep sub-micron MOSFET RF nonlinear model with new breakdown current model and drain to substrate nonlinear coupling

Cited by 5 publications

References 24 publications

Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis

Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis

Extraction of T-Type Substrate Resistance Components for Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistors Based on Two-Port S-Parameter Measurement

Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zinc-blende-phase MESFETs (metal-semiconductor field-effect transistors)

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