An Improved Compact Model of Silicon-Controlled Rectifier (SCR) for Electrostatic Discharge (ESD) Applications

Lou, Lifang; Liou, J.J.

doi:10.1109/ted.2008.2006739

Cited by 21 publications

(8 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By the time the excessive carriers (i.e. reverse recovery charge) are cleared, the thyristor will recover the ability for withstanding input voltage [6]. Then the reverse current is rapidly reduced from the maximum value to the steady-state leakage current value.…”

Section: Thyristor Reverse Recovery Model a Selection Of The Analytical Modelmentioning

confidence: 99%

Parameter Optimization of Thyristor Snubber Circuit in LSTF Quench Protection System

Wei

et al. 2019

IEEE Access

View full text Add to dashboard Cite

The Large-scale Superconductor Test Facility (LSTF) is an important part of comprehensive research facilities in support of China Fusion Engineering Test Reactor (CFETR). In order to protect the superconducting magnets from being damaged in quench accident, the Quench Protection System (QPS) should be designed to commutate the energy stored in the coils. The snubber circuit is used to reduce the reverse recovery current and voltage of thyristor in QPS, and it can impact the reliability and stability of the QPS. In general, the studies of snubber circuit are focused on the DC turn-off process of thyristor used in HVDC, which has small turn-off current. However, the turn-off current can reach to 100 kA in the QPS of LSTF. In this paper, a thyristor reverse recovery model is described, and the key parameters of reverse recovery current are obtained from the testing experiment. Based on the transient analysis of snubber circuit, a systematic approach is used to minimizing the resistance and capacitance of snubber circuit of QPS working condition is proposed. By the MATLAB simulation and comparison, minimum parameters of snubber circuit were obtained, and proved that the approach can improve the reliability and stability of system, while reduce the cost of QPS.

show abstract

Section: Thyristor Reverse Recovery Model a Selection Of The Analytical Modelmentioning

confidence: 99%

Parameter Optimization of Thyristor Snubber Circuit in LSTF Quench Protection System

Wei

et al. 2019

IEEE Access

View full text Add to dashboard Cite

show abstract

“…6(a) [1]- [6], [30]. The methodology for combining the core MOSFET model with the ESD wrapper model is outlined in [9], [30].…”

Section: A Mosfet Esd Snapback Modelmentioning

confidence: 99%

Verification of Snapback Model by Transient I-V Measurement for Circuit Simulation of ESD Response

Meng

Rosenbaum

2013

IEEE Trans. Device Mater. Relib.

View full text Add to dashboard Cite

It is demonstrated that if the compact model of a snapback-type device is calibrated using only pulsed I-V data, it may not correctly reproduce the device response to arbitrary electrostatic discharge (ESD) waveforms. Transient I-V measurements are demonstrated to improve the completeness of the device characterization and model verification. Given an accurately calibrated ESD compact model, circuit simulations may be used to identify device-tester interactions that have been reported to cause unexpected damage during ESD testing. The interaction between a snapback device and an ESD tester can be understood in the context of a relaxation oscillator.Index Terms-Circuit simulation, electrostatic discharge (ESD), metal-oxide-semiconductor (MOS) model, reliability.

show abstract

“…In this paper, in order to prevent a vacuum contact breakdown delay, reduce energy arc vacuum interrupter when it is open, we use the natural method of parallel thyristor commutation in advance to reduce arcing time, so as to reduce arc energy effect [1]. However, in principle, the administration of a certain turn-off thyristor recovery time, after a certain period of time will produce the same forward voltage at both ends of the thyristor at this time if the recovery time is not enough [2], will cause the thyristor is turned on again, thereby turning off failed. So effective recovery factors affect thyristor is necessary.…”

Section: Introductionmentioning

confidence: 99%

Zero-turn-off thyristor zero voltage block media recovery analysis of influencing factors

Fang¹,

Xu²,

Zhuang³

2016

Proceedings of the International Symposium on Mechanical Engineering and Material Science

View full text Add to dashboard Cite

For the analysis of transient zero through the thyristor turn-off characteristics of recovery factors, the researchers are by changing the polarity of the supply voltage of the anode current commutation always realize thyristor is turned off, but will be under a lot of anti-off thyristor during recovery forward voltage, and this paper was forced commutation thyristor zero crossing, after the zero-crossing through the freewheeling diode voltage across the thyristor is zero, so the previous studies are not suitable for the object of this article. This paper presents the experimental circuit thyristor forced through zero-zero-voltage shutdown recovery by the experimental system to study the effects of the thyristor transient recovery time of two important factors, and in respect of factors (the size of the through-flow, flow time) thyristor recovery time characteristics of the particular what impact do a detailed analysis and the results showed that: the thyristor through-flow growth and an increase in the magnitude of flow-through time will adversely affect their recovery time.

show abstract

An Improved Compact Model of Silicon-Controlled Rectifier (SCR) for Electrostatic Discharge (ESD) Applications

Cited by 21 publications

References 7 publications

Parameter Optimization of Thyristor Snubber Circuit in LSTF Quench Protection System

Parameter Optimization of Thyristor Snubber Circuit in LSTF Quench Protection System

Verification of Snapback Model by Transient I-V Measurement for Circuit Simulation of ESD Response

Zero-turn-off thyristor zero voltage block media recovery analysis of influencing factors

Contact Info

Product

Resources

About