2004
DOI: 10.1002/mmce.20046
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An improved CAD procedure for oscillator circuit design using fast-approximation formulas describing the voltage-dependent non-linear characteristics of the intrinsic equivalent circuit elements of the active devices

Abstract: This article presents a selection of the calculated and measured results of an oscillator circuit using two source-coupled junction field-effect transistors (JFETs), which are investigated at a number of different operating points. These results illustrate vividly some strange but typical problems of the oscillator design, such as "spurious" and "wrong" or "jumping" oscillation frequency.

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Cited by 2 publications
(8 citation statements)
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“…These equations are inserted here and produce a good forecast of the electrical behavior of the oscillator circuit with regard to the common operating voltage and the values of several necessary resistors in the oscillator circuit, which determine the different operating points of the active devices, respectively. The dc circuit is shown in Figure 11 [6] and clarifies the physical context of the dc quantities. Due to the voltage drop (V r ) at the drain resistor (R D ), the dc values of the two drain-source-voltages (V ds1 ) and (V ds2 ) are always different, whereas those of the two gate-sourcevoltages (V gs1 ) and (V gs2 ) are always the same.…”
Section: Endmentioning
confidence: 97%
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“…These equations are inserted here and produce a good forecast of the electrical behavior of the oscillator circuit with regard to the common operating voltage and the values of several necessary resistors in the oscillator circuit, which determine the different operating points of the active devices, respectively. The dc circuit is shown in Figure 11 [6] and clarifies the physical context of the dc quantities. Due to the voltage drop (V r ) at the drain resistor (R D ), the dc values of the two drain-source-voltages (V ds1 ) and (V ds2 ) are always different, whereas those of the two gate-sourcevoltages (V gs1 ) and (V gs2 ) are always the same.…”
Section: Endmentioning
confidence: 97%
“…The main reason for this is the severe voltage dependence [4], [5] of the intrinsic transistor equivalent circuit elements, which represent the physical properties of the semiconductor substrate. To get a proper description of the nonlinear course of the characteristic parameters of the JFET's intrinsic equivalent circuit elements, a number of measurements for a wide range of appropriate values of the drain-source-voltage and the gate-sourcevoltage and for different values of the concerning resistors must be done [6], [7]. Then, the measured and calculated values are approximated by fast computable formulas.…”
Section: Endmentioning
confidence: 99%
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“…In this way, it is possible to evaluate the matrix representation of the reflection coefficient as in (3).…”
Section: Conversion Matrix Evaluationmentioning
confidence: 99%
“…As said, in this case spurious frequencies appearing only when the oscillating signal becomes large cannot be detected. When the large-signal behavior of the oscillator is investigated, harmonic balance or time domain analysis are the usual approaches [2][3][4][5]. In the former case, a probing technique allows the detection of a spurious frequency, if it is present [6].…”
Section: Introductionmentioning
confidence: 99%