An Improved Broadband High Linearity SiGe HBT Differential Amplifier

Pan, Hsuan‐Yu; Larson, L.E.

doi:10.1109/tcsi.2010.2103191

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Cited by 3 publications

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“…On the other hand, recent works that focused on amplifier linearity in analog applications suitable for defense electronic systems such as radar and electronic warfare platforms, were based on HEMT technology [15,16] which is not as compatible with OEIC devices such as PIN photodetectors as HBT technology in terms of fabrication simplicity. We have also seen some recent works which used various techniques to improve the linearity of HBT LNAs [17,18]. However, they are not suitable for electronic warfare platforms due to their limited bandwidth performance.…”

Section: Introductionmentioning

confidence: 99%

An Investigation of Tradeoff Options for the Improvement of Spurious-Free Dynamic Range in HBT Transimpedance Distributed Amplifiers

Taher

Scott²

2012

PIER Letters

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Abstract-This work introduces and investigates various methods of improving spurious-free dynamic rage (SFDR) in HBT transimpedance distributed amplifiers by trading off transimpedance gain. The methods are theoretically analyzed in detail with design examples, compared against each other in terms of performance and the best tradeoff is determined. SFDR improvements of up to 9 dB are reported in our design examples.

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Section: Introductionmentioning

confidence: 99%