for goods, [5,6] which call the increased demands on high performance, miniaturization, [5,7,8] high density, [9][10][11][12] and low consumption. [7,13] Crossbar memory devices offer the promising potential for increasing the device density, since the advantaged layouts coordinate to the dimension shrinkage of memory devices. [8,10,12,14,15] With this layout, each crosspoint presents an independent memory unit, where stores binary information as high resistance states (HRS, 0 state) and low resistance states (LRS, 1 state). The key issue for read operations in crossbar memories is to separate HRS and LRS without overlapping depending on the microstructures of electrodes and interface. [16,17] Current microfabrication processes only extend directly to materials and architectures that can be patterned by the top-down strategy and depositionlithographic approaches. [12,[18][19][20] The interface uniformity at each crosspoint of crossbar is destroyed in these drastic fabrication processes, which seriously impacts the overall device performance. [20] Printed electronics contributes an efficient, diverse materials adoptability and multidimensional patterns manufacturing technology. [15,21,22] But the precision of the printing and the manipulability of the precise overlapping on the electrodes scarcely promise high integration and interface uniformity. [23][24][25] As for conventional crossbar memory devices with a planar shape, the large fluctuations of the resistance value are unavoidable from the stochastic and multiple formations of conductive filaments in a memory unit. [16] It was reported that the growth of conductive filaments is seriously affected by the local electrical fields. The pyramid-structured electrode improves the resistive switching characteristics via the tip-enhanced electric effect. [26,27] It is desirable to explore a continuous micro/nanofabrication strategy to achieve the nanoscale functional layer on the microstructured electrodes with high density and high performance.Here, we demonstrate a full printing strategy to fabricate Ag microwire/silk fibroin microwire/Ag microwire-based crossbar memory devices (minimum unit interval: 27 µm). In this work, triangular prism-structured Ag microwire electrode array can be printed at the nanoscale, which is the privileged structure for the switching process of the resistance memory devices. Conformal electrode/functional layer with the uniform interface can be well fabricated through regulating the conformal Flexible memory devices with optimal tip-enhanced structures and high density are necessary for data storage devices. Printed electronics combine an efficient manufacturing approach with diverse materials adoptability and multidimensional patterns. However, the precision of the printed structures and the nonuniform of the interfaces restrict the storage density and performance severely. A full printing strategy to fabricate crossbar memory devices with triangular prism-structured Ag microwire electrodes and Ag/silk fibroin conformal interlayers is r...