An FTIR study of the surface chemistry of the dynamic Si(100) surface during etching in alkaline solution

Haiss, Wolfgang; Raisch, Philipp; Schiffrin, David J.; Bitsch, Lennart; Nichols, Richard J.

doi:10.1039/b200408a

Cited by 15 publications

(23 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar transients are also found with p-type (100) electrodes. Although measurement conditions differ, the transients measured for (100) electrodes, both n-as well as p-type, correspond well to those of Raisch et al 14,24 (4) Influence of Temperature on Voltammograms. In the case of p-type (100) and (111) electrodes, a change in temperature does not alter the basic shape of the voltammogram measured at a fixed scan rate (Figure 7a,b).…”

Section: Resultssupporting

confidence: 82%

Anisotropy in the Anodic Oxidation of Silicon in KOH Solution

Philipsen

Kelly

2005

J. Phys. Chem. B

View full text Add to dashboard Cite

The electrochemical oxidation and passivation of Si(100) and Si(111) electrodes in KOH solution was studied by potentiodynamic and potential-step measurements. Striking differences were observed between the surfaces. A comparison of the results for n-and p-type electrodes led us to conclude that electrochemical oxidation of silicon in alkaline solution must be triggered by a chemical reaction. The strong influence of temperature on the current-potential and current-time results of (111) surfaces supports the importance of chemical activation. Photocurrent experiments on n-type (111) electrodes show that oxide nucleation is important for growth of the passive layer. A mechanism combining surface chemistry and electrochemistry is proposed to account for the pronounced anisotropy in anodic oxidation.

show abstract

Section: Resultssupporting

confidence: 82%

Anisotropy in the Anodic Oxidation of Silicon in KOH Solution

Philipsen

Kelly

2005

J. Phys. Chem. B

View full text Add to dashboard Cite

show abstract

“…i) An alternative method of assessing the confidence intervals then consists in looking at the "noise" when the parameters are plotted as a function of spectrum number (or as a function of time, see Figs. 4,6,7). It can be verified that this simple method leads to results similar to those obtained from the χ 2 test of a single fit.…”

Section: Discussionsupporting

confidence: 64%

“…The change in the spectral baseline indicated that the electronic state of the surface switches from electron accumulation at the negative potential to inversion at the positive potential. At the same time hydrogen termination of the surface 6,7 disappears. When the potential is switched back to its negative value, the initial hydrogenated surface is recovered after an induction time.…”

mentioning

confidence: 94%

Oxide Formation and Dissolution on Silicon in KOH Electrolyte: An In-Situ Infrared Study

Philipsen

Ozanam

Allongue

et al. 2016

J. Electrochem. Soc.

View full text Add to dashboard Cite

The n-Si(111)/6 M KOH electrolyte interface has been investigated by in-situ multiple-internal reflection infrared spectroscopy, at room temperature and at 40°C. The potential was stepped successively to positive and negative values with respect to open-circuit potential, during which surface oxidation and oxide dissolution occur, respectively. Infrared spectra were recorded together with the interfacial current. Analysis of the spectra indicates that formation of an oxide layer at the positive potential takes place in two steps: a first step associated with replacement of the surface SiH by SiOH or SiO− groups, and a second step, associated with the formation of SiOSi groups and growth of a passivating oxide layer. The mechanism is strongly dependent on the competition between oxidation and dissolution, which accounts for the complex shape of the current transient and its temperature dependence. At the negative potential, dissolution of the oxide takes place by random pitting, until the hydrogenated surface is restored.

show abstract

“…FTIR spectroscopy measurements were carried out in the attenuated total reflectance (ATR) configuration [21]. Prisms were made from float zone grown Si(1 0 0) wafers (1 kX cm, Compart Technology, UK).…”

Section: Ftir Spectroscopymentioning

confidence: 99%

Surface termination and hydrogen bubble adhesion on Si(100) surfaces during anisotropic dissolution in aqueous KOH

Haiss

Raisch

Bitsch

et al. 2006

Journal of Electroanalytical Chemistry

Self Cite

View full text Add to dashboard Cite

The formation and growth of hydrogen bubbles on a Si(1 0 0) surface during its anisotropic etching in aqueous KOH has been investigated. Quantitative data on bubble size, lifetime and density on the etching surface was obtained and their dependence on KOH concentration, applied potential and temperature were measured. In situ FTIR measurements demonstrated a strong dependence of bubble attachment on surface termination and hence on the hydrophilicity of the Si(1 0 0) surface during etching. The formation of surface defects and the geometry of bubble imprints have been directly characterised with scanning probe microscopy. The analysis of hillock formation and statistical considerations show that the adhesion of hydrogen bubbles during anisotropic etching of silicon is a source of surface roughness and pyramid formation.

show abstract

An FTIR study of the surface chemistry of the dynamic Si(100) surface during etching in alkaline solution

Cited by 15 publications

References 33 publications

Anisotropy in the Anodic Oxidation of Silicon in KOH Solution

Anisotropy in the Anodic Oxidation of Silicon in KOH Solution

Oxide Formation and Dissolution on Silicon in KOH Electrolyte: An In-Situ Infrared Study

Surface termination and hydrogen bubble adhesion on Si(100) surfaces during anisotropic dissolution in aqueous KOH

Contact Info

Product

Resources

About