An FEM based framework to simulate semiconductor devices using streamline upwind Petrov-Galerkin stabilization technique

Kumar, Gaurav; Singh, Mandeep Singh Jit; Ray, Ashok K; Trivedi, Gaurav

doi:10.1109/radioelek.2017.7936644

Cited by 3 publications

(4 citation statements)

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“…TiberCAD, a commercial device modeling package with many novel features, uses FEM with continuous basis functions [16]. Finite element methods including discontinuous local basis functions, called discontinuous Galerkin (DG) methods, also permit local charge conservation [42], and they have recently begun to be applied to semiconductor device problems [43,44]. FEM methods simplify consideration of complicated simulation domains and in theory allow higher-order convergence of solutions, but performance of such methods can only be determined with testing.…”

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confidence: 99%

Simudo: a device model for intermediate band materials

2019

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We describe Simudo, a free Poisson/drift-diffusion steady state device model for semiconductor and intermediate band materials, including self-consistent optical absorption and generation. Simudo is the first freely available device model that can treat intermediate band materials. Simudo uses the finite element method (FEM) to solve the coupled nonlinear partial differential equations in two dimensions, which is different from the standard choice of the finite volume method in essentially all commercial semiconductor device models. We present the continuous equations that Simudo solves, show the FEM formulations we have developed, and demonstrate how they allow robust convergence with double-precision floating point arithmetic. With a benchmark semiconductor pn-junction device, we show that Simudo has a higher rate of convergence than Synopsys Sentaurus, converging to high accuracy with a considerably smaller mesh. Simudo includes many semiconductor phenomena and parameters and is designed for extensibility by the user to include many physical processes.

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confidence: 99%

Simudo: a device model for intermediate band materials

2019

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“…The simulations of 4H‐SiC MOSFET are carried out using the drift‐diffusion (DD) transport mode, Poisson equation and heat transport equation [7, 8]. These equations allow the calculation of electrostatic potential, the concentrations of electrons and holes, current and lattice temperature.…”

Section: Methodsmentioning

confidence: 99%

“…These equations allow the calculation of electrostatic potential, the concentrations of electrons and holes, current and lattice temperature. The DD model can be divided into three categories: firstly, current equations; secondly, continuity equations; and lastly, Poisson equation [8, 9]. The transport equations control the carrier charge flow (the DD current) depending on potential and carrier concentration.…”

Section: Methodsmentioning

confidence: 99%

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Impact of interface traps/defects and self‐heating on the degradation of performance of a 4H‐SiC VDMOSFET

Alqaysi

Martı́nez

Ahmeda

et al. 2019

IET Power Electronics

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The reliability of silicon carbide metal oxide semiconductor field-effect transistors remains a challenge in power applications and relates to the SiO 2-SiC interface. The presence of unwanted interface traps/defects degrades the device performance. The impact of acceptor traps/defects on the performance of a 4H-SiC vertical Diffused Metal Oxide Semiconductor Field Effect Transistor (DMOSFET) with a breakdown voltage of 1700 V is investigated.-and-characteristics were simulated, using a drift-diffusion model coupled to Fourier heat equations, and are in a good agreement with experimental results. The presence of interface traps/defects were shown to produce degradation of threshold voltage, but the impact diminishes as temperature increases. A threshold voltage shift of 3.5 V occurs for a trap concentration of 2 × 10 13 cm-2 /eV at room temperature. The transfer characteristics obtained from electro-thermal modelling show a larger degradation than those at a constant temperature. This degradation increases with the drain bias increase. The threshold voltage from the electro-thermal simulations is 5 V compared to 4 V observed in constant 423 K temperature simulations at. Finally, the interface traps/defects increases breakdown voltage exhibiting a strong dependency on the trap density and their energy decay characteristics.

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