An Extraction Method for the Interface Acceptor Distribution of GaN MOS-HEMT

Shi, Yijun; Chen, Wanjun; Sun, Ruize; Liu, Chao; Xia, Yun; Xin, Yajie; Xu, Xiaorui; Wang, Fangzhou; Deng, Xiaochuan; Chen, Tangsheng; Zhang, Bo

doi:10.1109/ted.2019.2936509

Cited by 8 publications

(14 citation statements)

References 23 publications

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“…The simplified device structure of GaN MOS-HEMT is shown in Fig. 1 previous work [11][12], the threshold voltage (Voff) of the short-channel GaN MOS-HEMT without the influence of the drain voltage can be calculated from the expression given below. The symbols' definition can be found in Table I.…”

Section: A Threshold Voltage Modelmentioning

confidence: 99%

“…The ionization condition of the acceptor-type trap is closely related with the applied voltage and its distribution function. In this work, the distribution function of the interface acceptor-type trap is assumed to be similar to the form in [11][12]. So the density of the ionized interface acceptor-type trap can be obtained by the integral of the product of Dit,A with their respective f(Ef, Et) from Ei_(GaN) to Ec_(GaN), shown in eq.…”

Section: A Threshold Voltage Modelmentioning

confidence: 99%

“…As the main concern, the acceptor-type trap formed in the fabrication process plays an important role on the device characteristics [6,7]. The ionization condition of those acceptor-type traps is critical for accurately modeling the characteristics of GaN MOS-HEMTs and closely related to the applied voltage [6][7][8][9][10][11][12]. For modeling the 2-dimension electron gas (2DEG) density and threshold voltage of GaN MOS-HEMTs, Wei et al [9] and Sun et al [10] have only considered the invariant ionized trap density, which fails to include the right ionization condition of the acceptor-type traps.…”

Section: Introductionmentioning

confidence: 99%

“…However, the drain voltage (VD) affects the threshold voltage in the way of pulling down the Fermi level of the electron and releasing the electron trapped in the acceptor-type traps, which will reduce the negative fixed charge in gate region. In our previous work [11,12], the influence of the drain voltage on the threshold voltage has not been considered. Because for the long-channel device, the drain-voltage induced reduction of the negative fixed charge in gate region nearly has no effect on the threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

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Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

Shi

Chen

et al. 2021

IEEE J. Electron Devices Soc.

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In this work, the influence of the acceptor-type trap on the threshold voltage and short-channel effect is analyzed and modeled for the short-channel GaN MOS-HEMT. Particularly, the analysis and modeling are carried out with the dependences of the traps' ionization condition on the gate voltage and drain voltage considered. From the calculated results based on the proposed threshold voltage model, it is found that both the interface acceptor-type trap and buffer acceptor-type trap play a vital role in the threshold voltage reduction for the short-channel AlGaN/GaN MOS-HEMT, due to the acceptor-type trap's detrapping effect induced by the drain voltage. The calculated results are well supported by the numerical simulation, which verified the correctness and accuracy of the presented model. Index Terms-GaN MOS-HEMT, short-channel effect threshold voltage, acceptor-type trap.

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Section: A Threshold Voltage Modelmentioning

confidence: 99%

Section: A Threshold Voltage Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

Shi

Chen

et al. 2021

IEEE J. Electron Devices Soc.

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“…• 0 / (2) where εSiNx is the coefficient of SiNx, ε0 is vacuum dielectric constant and TSiNx is the thickness of the SiNx dielectric layer. Assuming all the border traps above Ef is empty and below Ef is filled, the trap energy then equals to Ef thus its relation to Vgov can be obtained from TCAD simulations [24], as shown in the inset of Fig. 9a.…”

Section: Energy Distribution Extractionmentioning

confidence: 99%

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

Gao

Shi

et al. 2020

IEEE J. Electron Devices Soc.

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MIS-HEMT is one of the most promising structures to prohibit the unfavorable gate leakage in conventional AlGaN/GaN HEMTs. However, the extra insulator layer introduces massive border traps at insulator/AlGaN interface and results in the poor reliability. In this brief the energy distribution of border traps in AlGaN/GaN MIS-HEMT gate stack is extracted and investigated through a discharging-based trap energy profile technique. The technique adopts spot-Id sense measurement with 1 millisecond measurement time to capture the "whole (both fast and slow)" border traps. The results are beneficial to improve the reliability of AlGaN/GaN MIS-HEMT.

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Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique

Viswanathan

Pravin

Arasamudi

et al. 2021

Int J Numerical Modelling

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Traps present at the interface of oxide and barrier layers influence the device's DC and RF parameters. An investigation is carried out on the distribution of interface traps present in the AlGaN/GaN/AlInN Metal Oxide Semiconductor‐High Electron Mobility Transistor (MOS‐HEMT) structures. By incorporating Hafnium Oxide (HfO2) as a dielectric layer, the DC and RF parameters like current drive and Power‐Added Efficiency (PAE) for the device are evaluated. The Capacitance‐Voltage (C–V) curves showed a shift in its values upon increase in trap density, which attributes to the position of fermi level once the threshold voltage is reached. A theoretical estimation of interface trap densities revealed distributions in the magnitude of 9.52 × 1012 cm−2 eV−1 near the mid‐gap and around 3.4 × 1013 cm−2 eV−1 at the Conduction Band (CB) edge. Carrier concentration at the Two‐Dimensional Electron Gas (2DEG) influences the distribution of traps at the interface, which in turn affects the on‐resistance of the device. Cubic Spline Interpolation (CSI) technique is employed here to model the device parameters precisely. The higk‐K dielectric material causes a high cut‐off of 201 GHz for the MOS‐HEMT. There is about 42% improvement in the PAE compared to the conventional MOS‐HEMT device. The comparably low trap density values (1012 cm−2 eV−1) than the conventional ones, prove the high quality gate passivation features of the HfO2/AlGaN interface and could serve as a potential candidate for high power and microwave applications.

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An Extraction Method for the Interface Acceptor Distribution of GaN MOS-HEMT

Cited by 8 publications

References 23 publications

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique

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