An extended Drude model for the in-situ spectroscopic ellipsometry analysis of ZnO thin layers and surface modifications

Fricke, Lennart; Böntgen, Tammo; Lorbeer, Jan; Bundesmann, Carsten; Schmidt‐Grund, Rüdiger; Grundmann, Marius

doi:10.1016/j.tsf.2014.02.010

Cited by 9 publications

(5 citation statements)

References 4 publications

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“…Tauc relation is discussed in Section 3.1. The slight deviation in the energy bandgap from this work compared with the previous works [16, 19–21, 28] may be due to the fact that the values of bandgap depend on many factors like coating speed (rpm), the granular structure, the nature and concentration of precursors, the structural defects and the crystal structure of the films.…”

Section: Resultscontrasting

confidence: 76%

“…Many methods have been used to study the optical properties of ZnO thin films. Among these, spectroscopic ellipsometry (SE) [18, 19] is a non‐destructive method for determining such properties without the limitations of the other methods that have physical contact to the film [18]. Ellipsometry method uses detection of polarisation state to characterise thin films.…”

Section: Introductionmentioning

confidence: 99%

“…The optical model should be selected according to the optical properties of the sample [21]. SE has become a standard technique to obtain optical dielectric functions and thicknesses of bulk samples and especially layered thin film systems by evaluating the change of the polarisation state of a probe light beam during interaction with the system [19].…”

Section: Introductionmentioning

confidence: 99%

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Spectroscopic‐ellipsometry measurement of the optical properties of zinc oxide thin films prepared by sol–gel method: coating speed effect

Aghgonbad

Sedghi

2018

Micro & Nano Letters

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In this work, thin films of zinc oxide were prepared by sol-gel spin coating method with different coating speeds of 3600, 4800 and 6000 rpm. Spectroscopic ellipsometry analysis was used to extract the optical constants such as refractive index n, and extinction coefficient k, in the wavelength range of 300-800 nm. The knowledge of both n and k allows the calculation of the important properties such as real and imaginary parts of the dielectric function, the absorption coefficient and the optical bandgap energy. Ellipsometric measurements were collected at an incidence angle of 70°. Also, a computer programming of Kramers-Kronig (KK) relations was used to calculate the optical properties. The ellipsometric results were compared with the parameters obtained by the KK method. It was found that the coating speed in sol-gel method, noticeably affect optical properties of the films. The films were found to exhibit high transmittance and low absorbance in the visible region. The direct optical bandgap of the films was obtained in the range of 3.4-3.7 eV using the ellipsometric method. A decrease in the void fraction of layers with an increment in the coating speed had been seen.

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Section: Resultscontrasting

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Spectroscopic‐ellipsometry measurement of the optical properties of zinc oxide thin films prepared by sol–gel method: coating speed effect

Aghgonbad

Sedghi

2018

Micro & Nano Letters

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“…For the analysis and interpretation of ZnO and AZO thin films and optical properties, a multilayer model was used, in which the substrate was silicon (from the program library), and the investigated layer was fit using the general oscillator (GO) model. To obtain the dispersion relationships of optical constants n and k in oxides, the most popular model is the Cauchy model (the simplest model for nonabsorbing layers) [41]; oxide layers are also modeled using the Tanguy model [42], the Drude model [43] and the oscillator model [44,45]. Two Tauc-Lorentz oscillators were used [46].…”

Section: ⎯⎯ 2 + 2 +mentioning

confidence: 99%

Application Properties of ZnO and AZO Thin Films Obtained by the ALD Method

et al. 2021

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The thin layers of ZnO and ZnO: Al (Al doped zinc oxide—AZO) were deposited by the atomic deposition layer (ALD) method on silicon and glass substrates. The structures were deposited using diethylzinc (DEZ) and deionized water as zinc and oxygen precursors. A precursor of trimethylaluminum (TMA) was used to introduce the aluminum dopant. The present study of ALD-deposited ZnO and AZO films was motivated by their applications in photovoltaics. We attempted to expose several properties of such films. Structural, optical (including ellipsometric measurements) and electrical investigations were performed. We discussed the relations between samples doped with different Al fractions and their properties.

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“…The optical properties and the thickness of thin film structures can be derived from (Ψ,∆) values measured by spectroscopic ellipsometry (SE), where Ψ and ∆ describe the relative amplitude and relative phase change, respectively [8]. SE is the primary tool to determine the optical properties and structure of materials [9], in many cases utilizing the in situ capabilities [10,11]. Concerning amorphous Ge (a-Ge) films, papers dealing with the optical and structural characterization of evaporated Ge layers can be found in the literature [12][13][14][15][16], and only a few papers discuss the optical and structural characterization of a-Ge layers obtained by low energy (0.5-1.0 keV) ion bombardment [17,18].…”

Section: Introductionmentioning

confidence: 99%

Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry

et al. 2020

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Accurate reference dielectric functions play an important role in the research and development of optical materials. Libraries of such data are required in many applications in which amorphous semiconductors are gaining increasing interest, such as in integrated optics, optoelectronics or photovoltaics. The preparation of materials of high optical quality in a reproducible way is crucial in device fabrication. In this work, amorphous Ge (a-Ge) was created in single-crystalline Ge by ion implantation. It was shown that high optical density is available when implanting low-mass Al ions using a dual-energy approach. The optical properties were measured by multiple angle of incidence spectroscopic ellipsometry identifying the Cody-Lorentz dispersion model as the most suitable, that was capable of describing the dielectric function by a few parameters in the wavelength range from 210 to 1690 nm. The results of the optical measurements were consistent with the high material quality revealed by complementary Rutherford backscattering spectrometry and cross-sectional electron microscopy measurements, including the agreement of the layer thickness within experimental uncertainty.

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An extended Drude model for the in-situ spectroscopic ellipsometry analysis of ZnO thin layers and surface modifications

Cited by 9 publications

References 4 publications

Spectroscopic‐ellipsometry measurement of the optical properties of zinc oxide thin films prepared by sol–gel method: coating speed effect

Spectroscopic‐ellipsometry measurement of the optical properties of zinc oxide thin films prepared by sol–gel method: coating speed effect

Application Properties of ZnO and AZO Thin Films Obtained by the ALD Method

Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry

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