An explanation for the non-monotonic temperature dependence of the photoluminescence spectral features of self-organized InAs QDs

Jawher, Rayhani; Oueslati, M.; Sallet, Vincent; Harmand, Jean-Christophe; Chtourou, Radhwen

doi:10.1016/j.jlumin.2022.119441

Cited by 3 publications

(3 citation statements)

References 31 publications

(44 reference statements)

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“…Nevertheless, a similar anomalous temperature dependence, albeit of smaller magnitude, was observed in other materials before, see, e.g. for AgGaS 2 alloy [43], InGaAs/InP quantum wells [44], or nanostructures such as InAs/GaAs QDs [45][46][47] or CdSe/CdS colloidal QDs [48]. There, statistical or rate equation models were put forward to describe that phenonenon [49].…”

Section: Pl Investigationssupporting

confidence: 60%

“…These were, e.g. dark and bright states [48], deep-level localized states and ground state [47], wetting layer and QD states [46], or states arising from bimodal QD size distributions [46,49].…”

Section: Pl Investigationsmentioning

confidence: 99%

“…We finally note that our approach in equation ( 2), i.e. the mixing of states based on their oscillator strength is similar to the approach of [47][48][49]. However, in contrast with the aforementioned references, we do not fit the energies of the constituent transitions, but instead take without modification those computed by correlated multi-particle full CI calculations.…”

Section: Decomposition Of Pl Spectramentioning

confidence: 99%

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Anomalous luminescence temperature dependence of (In,Ga)(As,Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications

Sala,

Klenovský

2023

New J. Phys.

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We study (In,Ga)(As,Sb)/GaAs quantum dots (QDs) embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. QD samples are studied by temperature-dependent photoluminescence, and we observe that the QD emission shows anomalous temperature dependence, i.e. increase of energy with temperature increase from 10 K to ∼70 K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from eight band k ⋅ p theory with multiparticle corrections calculated using the configuration interaction method, we explain the anomalous temperature dependence as mixing of momentum direct and indirect exciton states. We also find that the k-indirect electron–hole transition in type-I regime at temperatures < 70 K is optically more intense than k-direct. Furthermore, we identify a band alignment change from type-I to type-II for QDs overgrown by more than one monolayer of GaSb. Finally, we predict the retention time of (In,Ga)(As,Sb)/GaAs/AlP/GaP QDs capped with GaSb layers with varying thickness, for usage as storage units in the QD-Flash nanomemory concept and observe that by using only a 2 ML-thick GaSb capping layer, the projected storage time surpasses the non-volatility limit of ten years.

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