An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors

Luan, Shengwen; Neudeck, G.W.

doi:10.1063/1.351809

Cited by 300 publications

(186 citation statements)

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“…9,10 This is due to the fact that in shorter channels, a relatively larger fraction of the applied source-drain voltage drops over the parasitic resistance, as compared with the long-channel transistors. To be able to evaluate the performance of the organic semiconductor, a correction for the parasitic resistance, R p ϭR s ϩR d , is required.…”

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confidence: 99%

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Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

Meijer

Veenendaal

Huisman

et al. 2003

Applied Physics Letters

157

118

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The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we determine the field-effect mobility and the parasitic series resistance. The extracted parasitic resistance, typically in the M⍀ range, depends on the applied gate voltage, and we find experimentally that the parasitic resistance decreases with increasing field-effect mobility. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1581389͔The interest in organic thin-film transistors ͑TFTs͒ has grown rapidly due to envisaged applications, such as integrated circuits 1 and active-matrix displays. 2 The switching speed of organic integrated circuits can be estimated from the performance of the individual transistors and is roughly proportional to ϳ FE /L 2 , 3 where L is the channel length of the transistor, and FE is the field-effect mobility. To reach higher switching speeds, the search for higher mobility materials is therefore important, but it is also of great interest to downsize the transistor geometries. In this work, the scaling behavior of the transfer characteristics with transistor channel length is investigated for a variety of solutionprocessable organic TFTs.In the experiments, we use heavily doped Si wafers as the gate electrode, with a 200-nm-thick layer of thermally oxidized SiO 2 as the gate-insulating layer. Using conventional lithography, gold source and drain contacts 100 nm thick are defined, with channel widths ranging from 1 mm to 1 cm and channel lengths between 0.75 and 40 m. The structures typically have an underetch of 0.5 m, which we neglect in the following analysis. A 10-nm layer of titanium acts as an adhesion layer for the gold on the SiO 2 . The SiO 2 layer is treated with the primer hexamethyldisilazane to make the surface hydrophobic. No special care is taken to clean the gold surface prior to deposition of the semiconductor. Poly͑2,5-thienylene vinylene͒ ͑PTV͒ films as semiconductor layer are deposited using a precursor-route process. 3 We systematically varied the processing conditions for the conversion from precursor to PTV, and we determined the average degree of conversion using the method described by Fuchigami et al. 4 This enabled us to systematically study PTV transistors at various degrees of conversion ranging from 60% to 100%, and consequently over a range of field-effect mobilities, between 10 Ϫ4 and 10 Ϫ3 cm 2 /V s. Poly͑3-hexyl thiophene͒ ͑P3HT͒ is spin-coated from a 1 wt % chloroform solution. Films of poly͓͑2-methoxy-5-(3Ј,7Ј-dimethyloctyloxy͔͒-p-phenylene vinylene͒ (OC 1 C 10 -PPV) and poly͓͑2,5-di-(3Ј,7Ј-dimethyloctyloxy͔͒-p-phenylene vinylene͒ (OC 10 C 10 -PPV), are spun from a 0.5 wt % toluene solution. Pentacene thin films are deposited using a precursor-route process. 3 The measurements are performed on freshly...

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confidence: 99%

“…14,15 For experimental evaluation of R p , Kelvin probe force microscopy 8 has been employed. Here, we investigate the scaling behavior of the transistor current 10,16,17 to estimate R p . We plot the total device resistance, R ON ϭV ds /I ds , as a function of the nominal channel length L, for different gate voltages in Fig.…”

mentioning

confidence: 99%

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

Meijer

Veenendaal

Huisman

et al. 2003

Applied Physics Letters

157

118

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“…3 that the saturation current for the a-IGZO TFT with AZO/Ag/AZO S/D electrodes is 45.5 µA at a bias of V DS =V GS =20V, while the TFT with Ag electrodes shows a drain current of 1.7 10 -3 µA at the same drain and gate bias voltage, indicating that a multilayer electrode greatly increases the driving current by improving the S/D contact. The increased drain current of the a-IGZO TFT with AZO/Ag/AZO multilayer electrodes can be understood in the same manner as the conventional metal oxide-semiconductor transistor structures, which is attributed the reduction of the parasitic contact resistance between the electrode and the channel layer [11]. Furthermore, the output curves of the a-IGZO TFT with Ag electrodes show obvious current crowding at low V DS (< 2.5V), whereas the drain current of the a-IGZO TFT with AZO/Ag/AZO multilayer electrodes shows a steep rise in the low V DS region, which further indicates the low contact resistivity of the AZO/Ag/AZO/IGZO structure.…”

Section: Resultsmentioning

confidence: 79%

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

No¹,

Yang²,

Park³

et al. 2013

Journal of Sensor Science and Technology

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This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/licenses/bync/3.0)which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.Journal of Sensor Science and Technology Vol. 22, No. 2 (2013) AbstractWe fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 µm) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10 -12 A, a threshold voltage of 0.41 V, a field effect mobility of 10.86 cm 2 /Vs, and an on/off ratio of 9 10 9 . From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.

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“…The total resistance can be calculated by using the equation (1) [9]. (1) where, d is the separation of the electrodes, R contact is the contact resistance between the channel and the S/D electrodes, R total is the total resistance, R sheet is the sheet resistance of the semiconducting layer outside the contact, and W is the fixed electrode width of 250 μm.…”

Section: Resultsmentioning

confidence: 99%

“…The transmission line method (TLM) is used for the evaluation of sheet resistance, contact resistance, and total resistance between the channel and source/drain electrodes [9,10]. Improvement of electrical properties requires low specific contact resistance and good ohmic contact.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Contact Resistance Between Amorphous Silicon-Zinc-Tin-Oxide Thin Film Transistors and Different Electrodes Using the Transmission Line Method

Lee¹,

Han²,

Lee

2016

Transactions on Electrical and Electronic Materials

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A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10 2 Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm , and on/off current ratio of 9.7×10 6 A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

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An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors

Cited by 300 publications

References 8 publications

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

Investigation of the Contact Resistance Between Amorphous Silicon-Zinc-Tin-Oxide Thin Film Transistors and Different Electrodes Using the Transmission Line Method

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