An Experimental Study of High Voltage SiC PiN Diode Modules Designed for 6.5 KV / 1 KA

Peters, Dethard; Thomas, Bernd; Duetemeyer, T.; Hunger, Thomas; Sommer, Rainer

doi:10.4028/www.scientific.net/msf.679-680.531

Cited by 10 publications

(5 citation statements)

References 2 publications

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“…Fig. 1 shows the simulated structure referring to [1] with 96 diodes, 24 on each of the 4 separated DBC structures. These are soldered on an AlSiC baseplate that is attached on an aluminum cooler with a fixed temperature of 80 °C on the bottom.…”

Section: Thermal Simulation Methodsmentioning

confidence: 99%

“…The design of power electronic modules with SiC devices requires not only the investigation of the electric properties but also the study of the thermal behavior. This work shows the thermal simulation of a package of 48 or 96 PiN diodes on a high voltage module (6.5 kV/1 kA) [1]. The simulations show the influence of module design on the temperature distribution including the effect of thermal coupling between the diodes.…”

Section: Introductionmentioning

confidence: 99%

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Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA

Bayer

Bär

Kallinger

et al. 2015

MSF

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This work shows thermal simulations of a package of 48/96 high-voltage (6.5 kV/1 kA) PiN diodes. A temperature dependent heat generation for a forward voltage of 3.6 V with a realistic heat generating volume in the diode of (2.7x2.7x0.01) mm3 was used. The thermal coupling of two diodes was determined to be less than 1 % for a distance between the diodes of 10 mm. The temperature distribution for the entire module has been studied for two different ceramic insulating materials, AlN and Al2O3, as well as for two numbers of diodes, 48 and 96. This led to a maximum temperature of 106 °C/118 °C (AlN, 48/96 diodes) and 123 °C/144 °C (Al2O3, 48/96 diodes). Assuming a constant applied voltage, a variance of ±0.5 V of the characteristic curve (forward voltage versus current) due to variations in the production process was considered fork single diodes. For a shift of +0.5 V for a single diode, the maximum temperature difference to the cooler temperature becomes approximately twice the original difference. Additionally, the operation under constant current (7.1 A, 10.2 A, 14.2 A) was studied including single diode failure. For single diode failure, the resulting change of the maximum temperature would be less than 3 %.

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Section: Thermal Simulation Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA

Bayer

Bär

Kallinger

et al. 2015

MSF

View full text Add to dashboard Cite

show abstract

“…While this phenomenon has been identified more than 10 years ago, the race towards SiC substrates and epitaxy with lower defect density, leading to lower stacking fault density is still open. The progress has been very significant but still, no convincing bipolar device has appeared on the market yet (25).…”

Section: The High Voltage Territorymentioning

confidence: 99%

(Invited) Perspectives on SiC and III-N Based Devices for Power Electronics

Brylinski¹,

Planson²

2011

ECS Trans.

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SiC devices for power electronics are a reality. A first generation of reliable SiC rectifier devices outperforming all silicon devices has been released on the market with up to 1500V voltage handling capability. At best, GaN based rectifiers, with similar electrical performance and production cost, may reach the market by year 2015. For the same voltage range, prototypes of switching triode SiC devices with control electrode, using JFET and BJT topologies, are also under market evaluation. It seems nobody knows yet whether SiC MOS will finally get reliable enough for voltage over 200 V. III-N based HEMT hetero-junction devices may become superior alternative to the existing SiC switching triode devices. Still, a lot of work will be needed for reaching good enough reliability. On the long term, due to expectable Gallium shortage, SiC based heterojunction devices would offer sustainable solution, although the ideal hetero-structure has not been demonstrated yet.

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“…The carrier lifetime of a 4H-SiC after the device fabrication process is highly significant for the realization of 4H-SiC bipolar devices. The reverse recovery characteristics at more than 1 kV, which can be used for estimating the carrier lifetime, have been investigated in the past [1][2][3][4]. In the analysis of the reverse recovery characteristics, the charge removed during reverse recovery (Q rr ) can be expressed as follows [5]:…”

Section: Introductionmentioning

confidence: 99%

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

Nakayama

Ogata

Hayashi

et al. 2014

MSF

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The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low stray inductance. The maximum reverse voltage during the reverse recovery time reaches 8 kV, at which point the drift layer is fully depleted. The carrier lifetime at the high level injection is 0.086 μs at room temperature and reaches 0.53 μs at 250 °C.

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An Experimental Study of High Voltage SiC PiN Diode Modules Designed for 6.5 KV / 1 KA

Cited by 10 publications

References 2 publications

Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA

Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA

(Invited) Perspectives on SiC and III-N Based Devices for Power Electronics

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

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