An experimental investigation of silicon wafer thinning by sequentially using constant-pressure diamond grinding and fixed-abrasive chemical mechanical polishing

Li, Gengzhuo; Xiao, Chen; Zhang, Shibo; Sun, Ruoyu; Wu, Yongbo

doi:10.1016/j.jmatprotec.2021.117453

Cited by 31 publications

(11 citation statements)

References 35 publications

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“…Diamond particle, 11 the hardest synthetic abrasive, is extensively applied in ultra-precision machining of hard-to-machine materials; additionally, a fast MRR can be achieved. 12 The soft SiO 2 particle with low hardness is the preferred abrasive for chemical mechanical polishing (CMP) because the ultra-smooth surface with nanoscale roughness and nearly damage-free is obtained easily. 13 Unfortunately, an extremely low MRR (50 nm h −1 ) was acquired during the process of SiC CMP using only the colloidal SiO 2 abrasive.…”

Section: Introductionmentioning

confidence: 99%

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Luo,

Lu,

Jiang

et al. 2023

Nanoscale

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Section: Introductionmentioning

confidence: 99%

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Luo,

Lu,

Jiang

et al. 2023

Nanoscale

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“…[21] Among the various methods to achieve that, mechanical thinning of wafers consists in removing Si material by using a grinding wheel; a polishing pad and water or chemical abrasive slurry. This includes mechanical grinding [22,23] and chemical mechanical polishing. [23][24][25] Wafer thinning realized via the chemical etching through a wet chemical etching agent [26] or dry gas plasma chemical reactions with Si material.…”

Section: Introductionmentioning

confidence: 99%

“…This includes mechanical grinding [22,23] and chemical mechanical polishing. [23][24][25] Wafer thinning realized via the chemical etching through a wet chemical etching agent [26] or dry gas plasma chemical reactions with Si material. [27] However, a significant part of the original material is lost during the thinning process.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Crystalline Si Thin Films for Photovoltaics

Shen

Cabarrocas

et al. 2022

Physica Rapid Research Ltrs

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Crystalline Si (c‐Si) thin films have been widely studied for their application to solar cells and flexible electronics. However, their application at large scale is limited by their fabrication process. As reviewed in this paper, many approaches have been studied, but only some of them have been made into large‐scale industrial production. The standard wire sawing of Si ingots cannot be scaled down to produce thin c‐Si wafers and films due to the brittle nature of c‐Si material, the resulting significant thickness variations, and the waste of material. Therefore, techniques based on the kerf‐less processes including “top‐down” and “bottom‐up” approaches have been developed in recent decades. In this review, photovoltaic applications of thin c‐Si wafers with thicknesses ranging from 50 μm down to 1 μm are presented first. Then, methods to fabricate c‐Si thin films based on both approaches are detailed, including slim‐cut, “smart‐cut,” epi‐free, as well as various growth processes such as molecular beam epitaxy, liquid phase epitaxy, ion beam, and chemical vapor deposition processes at a wide range of growth temperatures, from 1000 °C down to 150 °C. The advantages and disadvantages of these methods are presented and compared.

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“…Wang et al systematically studied the “trap” effect of semi-fixed abrasive grain processing [ 18 ] and clarified the definitions and categories of semi-fixed abrasive grain processing. Lev et al studied the grinding mechanism of semi-fixed abrasives in the plastic domain and established a model for predicting the distribution of cutting depth using semi-fixed abrasives when processing silicon wafers and, finally, theoretically demonstrated the basic grinding characteristics of semi-fixed abrasive processing technology [ 19 ]. Based on the traditional Preston equation and the finite element method, a material-removal model of semi-fixed abrasive processing was proposed by Deng [ 20 ], where the influence on performance by semi-fixed abrasive and processing parameters was deeply investigated.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Basic Characteristics of Semi-Fixed Abrasive Grains Polishing Technique for Polishing Sapphire (α-Al2O3)

Lei

Feng

et al. 2022

Materials

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Single-crystal sapphire (α-Al2O3) is an important material and widely used in many advanced fields. The semi-fixed abrasive grain processing method based on solid-phase reaction theory is a prominent processing method for achieving ultra-precision damage-free surfaces. In order to develop the proposed method for polishing sapphire, the basic characteristics of the semi-fixed abrasive grains polishing tool for polishing sapphire were determined. Weight analysis was used to study the influence rules of parameters on surface roughness and material removal rates using an orthogonal experiment. Then, the optimized polishing tool was obtained through a mixture of abrasive particle sizes to reduce the difficulty in molding the polishing tool. Finally, polishing experiments using different polishing tools were carried out to investigate polishing performance by considering the surface roughness, material removal rate and the surface morphology during polishing. The results showed that (1) external load affects the surface roughness and material removal rate the most, followed by abrasive particle size, sand bond ratio, revolution speed of the workpiece and he polishing tool; (2) the difficulty in manufacturing the polishing tool could be reduced by mixing larger abrasive particles with small abrasive particles; (3) the polishing tool with 200 nm and 1 μm particle sizes performed best in the first 210 min polishing.

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An experimental investigation of silicon wafer thinning by sequentially using constant-pressure diamond grinding and fixed-abrasive chemical mechanical polishing

Cited by 31 publications

References 35 publications

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Fabrication of Crystalline Si Thin Films for Photovoltaics

Investigation on the Basic Characteristics of Semi-Fixed Abrasive Grains Polishing Technique for Polishing Sapphire (α-Al2O3)

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