Diode laser absorption spectroscopy has been used to study the four lowest energy excited states of atomic argon (1s2–1s5) arising from the 3p54s1 electronic configuration and produced in an inductively coupled RF discharge. Three of the states (1s2, 1s4 and 1s5) were detected using wavelength modulation spectroscopy with diode laser radiation in the wavelength range 425–430 nm, obtained by frequency doubling the output of a near infrared diode laser in a KNbO3 crystal. The 1s3 state was probed using direct absorption spectroscopy with the fundamental output of a diode laser operating at 795 nm. The 1s5 state dominates the total population of this manifold with a proportion of around 48%, which is essentially independent of plasma power and pressure. Translational temperatures varied with power but were essentially pressure independent. For example, at 20 mTorr total pressure and 400 W applied power, the temperature was found to be 384 ±15 K. The variations in concentrations of all four 1sn states with plasma power and pressure are reported and suggests that a statistical equilibrium between them has been established. The results are rationalized by utilizing a simple kinetic model, to determine the dominant production (electron impact excitation from the ground state) and loss (intra-manifold quenching and radiative decay) processes. Fast redistribution of population in the states, mainly via electron impact excitation to higher lying electronic states and subsequent radiative decay back down, in combination with modified radiative rates for the two radiative states as a consequence of radiation imprisonment, can partially account for the observed relative trends.