An experimental determination of the carrier lifetime near the SiSiO2 interface

Roberts, P.C.T.; Beynon, J.

doi:10.1016/0038-1101(73)90032-4

Cited by 20 publications

(6 citation statements)

References 3 publications

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“…The magnitude of the reverse diode current is the sum of the generation currents in the depletion volume of the field-induced junction and in that of the metallurgical junction. Based on the Shockley-Read-Hall theory for the single-level centers [10], the equations for the gated-diode are written as follows [13][14][15]:…”

Section: Resultsmentioning

confidence: 99%

Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Chiu

2013

Advances in Materials Science and Engineering

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The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.

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Section: Resultsmentioning

confidence: 99%

Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Chiu

2013

Advances in Materials Science and Engineering

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“…A limit value of R is reached when the depletion layer width reach a maximum value [9] (Wmax (2s/ qNA) 1/2 (VD + 2)1/2). A similar effect has been previously observed with capacitance measurements [10].…”

Section: Resultsmentioning

confidence: 99%

Diode Physical Parameters for HEXFETs Characterization of Dose Effect

Bendada¹,

Rais

1998

Active and Passive Electronic Components

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Modeling techniques of P-N junctions have been applied for studying the physical parameters in metal-oxide semiconductor field-effect transistor structures. A parameter extraction method provides a precise description of the changes in conduction processes due to radiation damages in the integral body-drain junction. A large increase of the ideality factor and series resistance is related to radiation-induced defects.

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“…In order to assess the surface generation velocity, quite often gated-diode measurements are used. 25,26 The principle is demonstrated in Fig. 8.…”

Section: Surface Generationmentioning

confidence: 99%

Electrical Quality Assessment of Epitaxial Wafers Based on p-n Junction Diagnostics

Claeys¹,

Simoen²,

Poyai³

et al. 1999

J. Electrochem. Soc.

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The potential for using dedicated p-n junction diode structures as a diagnostic tool for the electrical properties of silicon epitaxial wafers is outlined and experimentally validated. Key parameters of interest are the generation and recombination lifetime of the top layer, and the surface and epi-layer/substrate interface generation (recombination) velocity. Optimized extraction procedures for each of these properties are proposed and potential advantages/drawbacks discussed.

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An experimental determination of the carrier lifetime near the SiSiO2 interface

Cited by 20 publications

References 3 publications

Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Diode Physical Parameters for HEXFETs Characterization of Dose Effect

Electrical Quality Assessment of Epitaxial Wafers Based on p-n Junction Diagnostics

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