An experimental and numerical study on the forward biased SOA of IGBTs

Hagino, H.; Yamashita, J.; Uenishi, A.; Haruguchi, H.

doi:10.1109/16.485667

Cited by 75 publications

(16 citation statements)

References 9 publications

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“…In the case where is low, is also low so the effective potential over the e-b junction is high, for example 0.5 V. In this situation the current flowing through the junction at the critical point is obviously much too low to create a flatband situation, which has sometimes been suggested to be the situation necessary for inducing thermal runaway [29], [30]. Since is almost independent of , it can be concluded that it is the very high rate of current increase with increasing temperature at the critical point, and not a drastic reduction of the potential across the e-b junction, that is essential for thermal instability.…”

Section: Discussionmentioning

confidence: 99%

A Back-Wafer Contacted Silicon-On-Glass Integrated Bipolar Process—Part II: A Novel Analysis of Thermal Breakdown

Nenadovic

d’Alessandro

Nanver

et al. 2004

IEEE Trans. Electron Devices

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Abstract-Analytical expressions for the electrothermal parameters governing thermal instability in bipolar transistors, i.e., thermal resistance TH , critical temperature crit and critical current C crit , are established and verified by measurements on silicon-on-glass bipolar NPNs. A minimum junction temperature increase above ambient due to selfheating that can cause thermal breakdown is identified and verified to be as low as 10-20 C.The influence of internal and external series resistances and the thermal resistance explicitly included in the expressions for crit and C crit becomes clear. The use of the derived expressions for determining the safe operating area of a device and for extracting the thermal resistance is demonstrated.

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Section: Discussionmentioning

confidence: 99%

A Back-Wafer Contacted Silicon-On-Glass Integrated Bipolar Process—Part II: A Novel Analysis of Thermal Breakdown

Nenadovic

d’Alessandro

Nanver

et al. 2004

IEEE Trans. Electron Devices

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“…Therefore, an internal physical failure mechanism analysis is necessary. In the literature, some studies are available on Planar IGBTs [4][5][6][7][8][9], but very few descriptions of the internal physical parameters of the Punch Through Trench IGBT during such failures can be found [10][11][12]. In this paper, 1D and 2D simulations of the internal behaviour of a Punch Through Trench IGBT are investigated.…”

Section: Introductionmentioning

confidence: 99%

Turn-off failure mechanism analysis of Punch Through Trench IGBT under clamped inductive switching operation

Benmansour¹,

Azzopardi²,

Martin³

et al. 2007

2007 European Conference on Power Electronics and Applications

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The investigation of the internal physical behaviour of the Punch Through Trench Insulated Gate Bipolar Transistor, under Clamped Inductive Switching turn-off has been done. A two dimensional mixed circuit and device simulation tool has been used and two switching configurations have been carried out: a non-destructive and a destructive turn-off switchings have been analyzed and compared to each other. The results show that the failure is delayed after the turn-off and is due to a thermal runaway phenomenon initiated by the temperature rise within the device during the switching transient.

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“…Hagino et al [6] have studied the short-circuit on improved IGBT structures and observed a failure caused by impact ionisation for high supply voltages. Trivedi et al [7] have also pointed out the role of impact ionisation on the failure, but for unusual thermal boundary conditions.…”

Section: Introductionmentioning

confidence: 99%

Modeling of IGBT Short-Circuit Behavior

Bliek¹,

Guérin²,

Tholomier³

2002

phys. stat. sol. (a)

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Power electronic applications require components with highly efficient switching capabilities. The switching imposes electrical and thermal stresses on the components especially when defects occur. So it is necessary to know the extreme working limits for different loads. The aim of this paper is to analyse the short‐circuit behavior of the electrothermal insulated gate bipolar transistor (IGBT). The electrothermal modeling is based on the physical approach of the semi‐conductor fundamental equations and the thermal equation. The transport phenomena are described using the classical drift–diffusion model. Advanced mobility models taking into account the high electric field and the semi‐conductor surface effects have been used in the transport equations. The simulations have been carried out on a basic cell of the IGBT, using Davinci software. Simulations and experiments show that two destructive phenomena are possible: an immediate failure and a delayed break. The delayed break has been analysed using current, electric field, carrier concentration and temperature curves. In this case, the break is initiated by a thermal mechanism. The characteristics of this mechanism have been analysed and discussed. Electrical and thermal influences have been studied separately. The origin of the destructive phenomena is interpreted by a self‐supply mechanism of the parasitic transistor.

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An experimental and numerical study on the forward biased SOA of IGBTs

Cited by 75 publications

References 9 publications

A Back-Wafer Contacted Silicon-On-Glass Integrated Bipolar Process—Part II: A Novel Analysis of Thermal Breakdown

A Back-Wafer Contacted Silicon-On-Glass Integrated Bipolar Process—Part II: A Novel Analysis of Thermal Breakdown

Turn-off failure mechanism analysis of Punch Through Trench IGBT under clamped inductive switching operation

Modeling of IGBT Short-Circuit Behavior

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