An exact derivation of contact resistance to planar devices

Schuldt, S. B.

doi:10.1016/0038-1101(78)90003-5

Cited by 32 publications

(14 citation statements)

References 6 publications

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“…Should not this condition be fulfilled, a correction factor for rc would be computed following the indication given in ref. [7]. The sheet resistance of the strip layer was a variable parameter in the 2D code and at the same time it could be directly measured by means of VdP devices.…”

Section: Methodsmentioning

confidence: 99%

Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.

et al. 2002

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Al-Ti alloys with 72 wt% Al were employed for the realisation of ohmic contacts on 4×1019 cm-3 p-type ion implanted 4H- and 6H-SiC samples. Contact resistivity characterisations by TLM measurements were done at wafer level in the temperature range 28–290°C. Analysis of the TLM measurements took into account current crowding at the metal pads. More than half of the evaluated contact resistivity reached the minimum value detectable by the used TLM devices, that was slightly higher than 1×10-6 Ωcm2. Above this limit value, contact resistivity decreased for increasing temperature and was spread over a few decades. The maximum contact resistivity at 28°C was 2×10-4 Ωcm2, which changed to 5×10-6 Ωcm2 at 290°C. The thermal behaviour of these TLM structures featured thermionic-field emission conduction.

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Section: Methodsmentioning

confidence: 99%

Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.

et al. 2002

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“…Based on the extrapolated length ("transfer length") at zero potential the contact resistance is obtained. This method was shown to be effective by Berger [15] and Schuldt [16] for thin conducting layers.…”

Section: Introductionmentioning

confidence: 99%

Determination of Electrical Contact Resistivity in Thermoelectric Modules (TEMs) From Module-Level Measurements

Annapragada¹,

Salamon²,

Kolodner³

et al. 2012

IEEE Trans. Compon., Packag. Manufact. Technol.

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An experimental apparatus was developed to characterize the performance of a thermoelectric module (TEM) and heat sink assembly when the TEM was operated in refrigeration mode. A numerical model was developed to simulate the experiments.Bulk and interfacial Ohmic heating, the Peltier effect, Thomson effect and temperature-dependent bulk material properties, i.e., Seebeck coefficient and electrical conductivity were considered. A novel, self-consistent characterization methodology was developed to obtain the electrical contact resistivity at the interconnects in a TEM from the numerical simulations and the experiments. The electrical contact resistivity of the module tested was determined to be approximately 1.0×10 -9 Ωm 2 . The predictions are consistent with electrical contact resistivity obtained based on the performance specifications (ΔT max ) of the TEM.

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“…The TLM does not correctly include the spreading resistance caused by current crowding/spreading. [4][5][6] To include the spreading resistance, Berger added a "virtual" specific contact resistance 1 in his extended TLM (ETLM).…”

mentioning

confidence: 99%

An exact field solution of contact resistance and comparison with the transmission line model

Zhang

Lau

2014

Applied Physics Letters

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Based on the exact solution of the electric field, the contact resistance is calculated and compared with the widely used lumped-circuit transmission line model. Our model fully accounts for the spreading resistance, and is applicable to arbitrary contact size, film thickness, and resistivity in different parts forming the contact. The regimes dominated by the specific contact resistance or by the spreading resistance are identified and compared with experimental data. V C 2014 AIP Publishing LLC. [http://dx.

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An exact derivation of contact resistance to planar devices

Cited by 32 publications

References 6 publications

Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.

Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.

Determination of Electrical Contact Resistivity in Thermoelectric Modules (TEMs) From Module-Level Measurements

An exact field solution of contact resistance and comparison with the transmission line model

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