An evaluation of the deposition parameters for indium sulfide (In2S3) thin films using the grey-based Taguchi method

Wang, S.S.; Shiou, Fang‐Jung; Tsao, Chung-Chen; Huang, Siendong; Hsu, Chun-Yao

doi:10.1016/j.mssp.2013.06.012

Cited by 21 publications

(9 citation statements)

References 23 publications

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“…The estimated band gap values are listed in Table II. These results are in good agreement with previous works related to In 2 S 3 thin films [3,6,7]. The complex refractive indexes of the β-In 2 S 3 thin films are described as follows:…”

Section: Resultssupporting

confidence: 92%

“…The β-In 2 S 3 exist in three crystallographic modifications α, β and γ. Cubic structure of β-In 2 S 3 is a stable phase at room temperature. Thin films of this material have been prepared by different methods such as spray ions layer gas reaction (ILGAR) [5], radio frequency (RF) magnetron sputtering [6], chemical spray pyrolysis [7], sol-gel [8] and chemical bath deposition (CBD) [9].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Complexing Agent on the Structural, Optical and Electrical Properties of Polycrystalline Indium Sulfide Thin Films Deposited by Chemical Bath Deposition

et al. 2017

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Indium sulfide (β-In2S3) thin films are synthesized by chemical bath deposition method using three different complexing agent volumes, triethanolamine (TEA) (0.30, 0.45, and 0.60 ml). The effect of complexing agent on the structural, morphological, optical and electrical properties of chemically deposited indium sulfide (β-In2S3) thin films have been investigated in this work. The characterization of the present films is carried out using X-ray diffraction, scanning electron microscopy, UV-vis spectroscopy and electrical measurements. The structure of the films is polycrystalline with a cubic phase of β-In2S3. Firstly, the band gap of the film decreases from 3.74 eV to 3.15 eV by adding 0.30 ml TEA. Then, it increases to 3.79 eV with increasing TEA. Nevertheless, previously, the refractive index of the films increases from 2.13 to 2.67 for the 0.30 mL TEA and then it decreases to the value of 2.11 with increasing TEA. Extinction coefficient, real and dielectric constant of the films are calculated using the absorption and transmittance spectra. Firstly, the electrical resistivity of the films decreases from 3.46 × 108 Ω cm to 1.33 × 107 Ω cm by adding 0.30 ml TEA. Then, it increases to the value of 2.16 × 10 9 Ω cm with increasing TEA. Eventually, the more conductive film with worm-like morphology detected from the scanning electron microscopy is synthesized using 0.30 ml TEA. These results show that complexing agent has an important effect on the structural, morphological, optical and electrical properties of the deposited films.

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Section: Resultssupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Effect of Complexing Agent on the Structural, Optical and Electrical Properties of Polycrystalline Indium Sulfide Thin Films Deposited by Chemical Bath Deposition

et al. 2017

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“…A number of compound semiconducting materials like In 2 S 3 , In 2 Se 3 , InZnSe x , ZnO, ZnS, ZnSe are studied as a substitute to the traditional CdS buffer layer [4]. Among these, indium sulfide (In 2 S 3 ) is an important semiconductor material for optoelectronic and photovoltaic applications due to its chemical stability, wider optical band gap (2.0-2.75 eV), photoconductive behavior, high optical transmittance (480%) and controllable electrical properties [5][6][7]. It is a compound semiconductor of III-VI group and exits in three crystallographic forms in nature α-In 2 S 3 (cubic structure, stable upto 693 K), β-In 2 S 3 (spinel structure, stable upto 1027 K) and γ-In 2 S 3 (layered structure, stable above 1027 K).…”

Section: Introductionmentioning

confidence: 99%

Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for eco-friendly photovoltaic applications

Nehra

Chander

Sharma

et al. 2015

Materials Science in Semiconductor Processing

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“…Indium sulfide films have been prepared by various techniques such as chemical bath deposition (CBD) [21], radio frequency (RF) magnetron sputtering [22], SILAR [23], organometallic chemical evaporation [24], chemical spray pyrolysis (CSP) [25][26][27], thermal evaporation [28], atomic layer epitaxy [29] and novel ultrasonic method [30].…”

Section: Introductionmentioning

confidence: 99%

Physical investigations on (In2S3)x(In2O3)y and In2S3−xSex thin films processed through In2S3 annealing in air and selenide atmosphere

Gantassi¹,

Essaidi²,

Boubaker³

et al. 2014

Materials Science in Semiconductor Processing

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In 2 S 3 À x Se x and (In 2 S 3 ) x (In 2 O 3 ) y thin films have been prepared on glass substrates using appropriate heat treatments of In evaporated thin films. X-ray analysis shows that In thin films which were annealed under sulfur atmosphere at 350 1C were mainly formed by In 2 S 3 . A heat treatment of this binary in air at 400 1C during one hour leads to (In 2 S 3 ) x (In 2 O 3 ) y ternary material which has a tetragonal structure with a preferred orientation of the crystallites along the (109) direction. Similarly, a heat treatment of In 2 S 3 in selenium atmosphere at 350 1C during six hours leads to a new In 2 S 3 À x Se x ternary material having tetragonal body centered structure with a preferred orientation of the crystallites along the (109) direction. Optical band gap, refractive index and extinction coefficient values of In 2 S 3 À x Se x and (In 2 S 3 ) x (In 2 O 3 ) y thin films have been reached. Moreover, correlations between optical conductivity, XRD, AFM and Urbach energy of such ternary thin films have been discussed. Finally, the recorded formation disparity between the quaternary (In 2 S 3 ) x (In 2 O 3 ) y and ternary In 2 S 3 À x Se x compounds has been discussed in terms of the Simha-Somcynsky and Lattice Compatibility theories.

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An evaluation of the deposition parameters for indium sulfide (In2S3) thin films using the grey-based Taguchi method

Cited by 21 publications

References 23 publications

Effect of Complexing Agent on the Structural, Optical and Electrical Properties of Polycrystalline Indium Sulfide Thin Films Deposited by Chemical Bath Deposition

Effect of Complexing Agent on the Structural, Optical and Electrical Properties of Polycrystalline Indium Sulfide Thin Films Deposited by Chemical Bath Deposition

Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for eco-friendly photovoltaic applications

Physical investigations on (In2S3)x(In2O3)y and In2S3−xSex thin films processed through In2S3 annealing in air and selenide atmosphere

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