An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron x-ray topography

McNally, Patrick J.; Curley, J.; Krier, A.; Mao, Yichen; Richardson, Jacob J.; Tuomi, T.; Taskinen, M.-R.; Rantamäki, R.; Prieur, E.; Danilewsky, A.N.

doi:10.1088/0268-1242/13/4/001

Cited by 5 publications

(4 citation statements)

References 19 publications

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“…In this case, ε = 6.2 × 10 −4 . The magnitudes of stresses are given by |τ | = E|γ | where E, the Young modulus of Si (isotropic) = 162.3 GPa [13]. Thus, the limit on the stress magnitudes is of the order |τ xy | ≈ 100 MPa.…”

Section: Resultsmentioning

confidence: 99%

Mapping of mechanical stresses in silicon substrates due to lead tin solder bump reflow process via synchrotron x-ray topography and finite element modelling

Kanatharana

Pérez-Camacho

Buckley

et al. 2003

J. Phys. D: Appl. Phys.

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White beam synchrotron x-ray topography (WBSXRT) is a non-destructive technique, which is capable of analysing the strain and/or dislocation distribution in single crystal materials. This paper discusses the application of WBSXRT to the analysis of strain fields due to the microelectronic packaging of integrated circuits. A ball grid array package containing an Intel® Pentium® III microprocessor was employed to investigate the spatial extent of strain fields imposed on the underlying silicon substrate due to the reflow process for lead–tin solder bumps.Large area and section back-reflection SXRT images were taken before and after the reflow process at 350°C in atmosphere. The effects of strain imposed by the overlying bump structures in these x-ray topographs have been observed principally via orientational contrast. This was also the situation after the reflow process due to severe stresses in the underlying silicon beneath the lead bumps. The estimated magnitudes of shear stress, |τxy|, imposed on the underlying silicon were calculated to be of the order of 100 MPa. A simulation of the orientational contrast at the edge of bump was performed based on the kinematical theory of x-ray diffraction (Rantamäki R et al 1999 J. Appl. Phys. 86 4298). The degree of lattice distortion is well fitted to the topographs of the post-reflow sample. The spatial strain in the underlying silicon was relieved dramatically after the lead bumps were removed from the wafer, which confirms that the solder bump formation is indeed a major source of strain in the underlying Si. Finite element modelling was performed in two-dimensional plane strain mode. The magnitudes and spatial distribution of the stresses after the reflow process are in good agreement with the SXRT results.

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Section: Resultsmentioning

confidence: 99%

Mapping of mechanical stresses in silicon substrates due to lead tin solder bump reflow process via synchrotron x-ray topography and finite element modelling

Kanatharana

Pérez-Camacho

Buckley

et al. 2003

J. Phys. D: Appl. Phys.

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“…Infrared detectors based on heteroepitaxy have been previously studied e.g. with InAs/InGaAs combination [2]. In high quality semiconductor devices, especially in those that are heterostructure based, a near-perfect crystal lattice is vital.…”

Section: Introductionmentioning

confidence: 99%

Synchrotron X-ray topography study of defects in epitaxial GaAs on high-quality Ge

Lankinen

Knuuttila

Tuomi

et al. 2006

Nuclear Instruments and Methods in Physics Research Section A:

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Crystal defects of GaAs thin films deposited by metalorganic vapour phase epitaxy on high-quality Ge substrates are studied by synchrotron x-ray topography. The GaAs thin films were measured to have ≈ 500 dislocations cm −2 , which is a similar number to what plain Ge substrates show. The dislocation densities measured are also smaller than for instance those of high-quality vapour pressure controlled Czochralski grown GaAs wafers, which typically have dislocation densities of ≈ 1500 cm −2 . The GaAs films grown on both sides of two-sided substrates display very good crystal quality throughout the sample.

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“…InAs has been studied in an earlier work with synchrotron X-ray topography using the transmission geometry [8]. In Ref.…”

Section: Introductionmentioning

confidence: 99%

“…In Ref. [8] the main interest was in the evaluation of the heterostructure consisting of an In 0:97 Ga 0:03 As layer grown by liquid-phase epitaxy on an InAs substrate rather than in the characterisation of the defects in the bulk. The InGaAs/InAs structure was intended for use in an infrared detector working in the wavelength range from 1:8 to 5 mm.…”

Section: Introductionmentioning

confidence: 99%

Synchrotron X-ray topographic study of dislocations and stacking faults in InAs

Lankinen¹,

Tuomi²,

Riikonen³

et al. 2005

Journal of Crystal Growth

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An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron x-ray topography

Cited by 5 publications

References 19 publications

Mapping of mechanical stresses in silicon substrates due to lead tin solder bump reflow process via synchrotron x-ray topography and finite element modelling

Mapping of mechanical stresses in silicon substrates due to lead tin solder bump reflow process via synchrotron x-ray topography and finite element modelling

Synchrotron X-ray topography study of defects in epitaxial GaAs on high-quality Ge

Synchrotron X-ray topographic study of dislocations and stacking faults in InAs

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