An EPR study of defects induced in 6H-SiC by ion implantation

Abstract

Crystalline (0001) plane wafers of n-type 6H-SiC have been implanted at room temperature with 200 keV Ge + ions in the dose range 1012 to 1015 cm -2. Electron paramagnetic resonance (EPR) measurements have been made on these samples both before and after annealing them at temperatures in the range room temperature to 1500~ The as-implanted samples have a single isotropic and asymmetricline EPR spectrum whose width, AB , increases withion dose before 1" PP fal mg when a buried continuous amorphous layer is produced. This increase is interpreted in terms of the change in the relative intensity of a line with g = 2.0028 _+ 0.0002, ABpp = 0.4 mT associated primarily with carbon dangling bonds in a-SiC and a line with g in the range 2.0033 to 2.0039 of uncertain origin. The variation with anneal temperature of the populations of these defects is reported.

Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

“…Neither is it revealed by the ξ ( T ) dependence that, as mentioned above, reflects the T dependence of the dose rate effect, also studied previously in traditional measurements with continuous ion beams (or unintentionally scanned beams due to rastering) 13 15 . A special role of T ~ 100 °C has, however, been noted in a number of previous studies of all three main polymorphs of SiC: 4 H -SiC 14 , 6 H -SiC 22 23 24 25 , and 3 C -SiC 26 27 28 29 , evidenced either as the onset of post-irradiation defect annealing 22 23 24 26 27 28 , as a rapid decrease in the cross-section of damage production 25 , as a qualitative change in the radiation resistance of nanocrystalline SiC 29 , or as a maximum of the concentration of open-volume defects monitored by positron annihilation spectroscopy 14 . The non-monotonic τ ( T )-dependence of Fig.…”

Ferromagnetism in proton irradiated 4H-SiC single crystal

“…This is consistent with what Barklie et al found. 29 The SPIS results show that the defect concentration in irradiated (2 × 10 16 ions/cm 2 ) 4H-SiC is much higher than that of nonirradiated 4H-SiC. Experimental results and theoretical calculations confirm that single Si vacancy and divacancies can induce magnetic moments.…”

“…The EPR line shape shows a Lorentzian form for irradiated 4H-SiC, meaning the existence of localized magnetic moments. 29 Moreover, the EPR spectra display broad line, which may arise from the superposition of several defects such as single vacancy and divacancy. Fig.…”

Experimental and Theoretical Validation of Room Temperature Intrinsic Ferromagnetism in Cr3C2 Due to Interstitial Carbon Atoms

“…The g factor and linewidth topographies are assigned to the defects related to carbon dangling bonds in Cr 3 C 2 NCs. [ 6,7,32 ] Consequently, it is lucid to presume that the FM in C r 3 C 2 NCs is stemmed from defects, and the M s depends on the defects concentration.…”