An Epitaxy Transfer Process for Heterogeneous Integration of Submillimeter-Wave GaAs Schottky Diodes on Silicon Using SU-8

Xie, Ling; Nadri, Souheil; Alijabbari, Naser; Cyberey, Michael E.; Bauwens, Matthew F.; Lichtenberger, Arthur W.; Barker, N. Scott; Weikle, Robert M.

doi:10.1109/led.2017.2756920

Cited by 14 publications

(6 citation statements)

References 22 publications

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“…SU-8 has a high transmission rate at 1550 nm. It also has a low curing temperature and volumetric shrinkage during the bonding process to minimize the process-induced variation [18,19].…”

Section: Coupling Schemementioning

confidence: 99%

Hybrid and heterogeneous photonic integrated near-infrared InGaAs/InAlAs single-photon avalanche diode

Zhang¹,

Xu²,

Zhang³

et al. 2023

Quantum Sci. Technol.

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We have demonstrated the integrated InGaAs/InAlAs single-photon avalanche diodes (SPAD) with Si waveguides and grating couplers on the Silicon-on-insulator (SOI) substrate. A vertical coupling scheme is adopted which allows the use of a thick bonding interlayer for high yield. SU-8 is selected to be the adhesion layer with a low transmission loss, low volumetric shrinkage, and a low curing temperature. In addition, both hybrid and heterogeneous integration schemes are realized which are compatible with the current multi-project wafer (MPW) process. Extensive performance characterization is carried out while the results are compared. Our hybrid integrated SPAD exhibits high photon detection efficiency (PDE) of ~21% and a relatively low dark count rate (DCR) of 8.6×105 Hz, which are among the best performance reported for InGaAs/InAlAs SPADs while the heterogeneous integrated SPAD shows a decent PDE of 6% with a DCR of 2×107 Hz. Combined with the inherent wide applicability of the bonding using SU-8 layer, this photonic integration provides a promising solution for large-scale quantum information with various material systems.quantum information with various material systems.

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“…SU-8 has a high transmission rate at 1550 nm. It also has a low curing temperature and volumetric shrinkage during the bonding process to minimize the process-induced variation [18,19].…”

Section: Coupling Schemementioning

confidence: 99%

Hybrid and heterogeneous photonic integrated near-infrared InGaAs/InAlAs single-photon avalanche diode

Zhang¹,

Xu²,

Zhang³

et al. 2023

Quantum Sci. Technol.

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“…Furthermore, the literature clearly shows that crosslinked SU-8 is an excellent adhesive layer for wafer bonding. Wafer-level SU-8 bonding was used to fabricate devices such as thermal flow sensors [14], microfluidic devices [15], ultrasonic transducers [16], pressure sensors [17], GaAs Schottky diodes [18], and was also used for MEMS packaging [19]. Furthermore, uncross-linked SU-8 has several interesting properties, specifically as a planarizing sacrificial layer since it can provide a flat and stable surface.…”

Section: Deposition Of Su-8 On the Micro-polyhedronmentioning

confidence: 99%

A rapid technique to integrate micro-components on released MEMS dies using SU-8

Gour¹,

Nabki²,

Ménard³

2020

J. Micromech. Microeng.

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This technical note reports a rapid technique to post-process and assemble micro-components onto dies including released movable microstructures. The method is applied to microelectromechanical systems (MEMS) chips that were fabricated using a commercial process, PolyMUMPs from MEMSCAP. It allows the assembly of a micro-polyhedron over released micromotors and ensures that the micromotors remain fully functional. The micro-polyhedrons are fabricated using laser ablation and are spin coated with a thin layer of SU-8, acting as a bonding layer. Then, they are bonded to chips that are placed on a 3D integration platform with a navigating mask, which protects the released structure during the subsequent assembly steps. The resulting micro-polyhedron-integrated-micromotors were tested and found to rotate similarly to devices without micro-polyhedrons, demonstrating that the developed procedure can be applied for post-release 3D integration of MEMS without significantly affecting the mechanical performance of the devices.

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“…This technology uses low temperature and low pressure silver sintering in combination with the lamination of prepreg layers. The basic principle of the technology was developed within the funded EmPower project [5]. A detailed description of SLT is given in [6].…”

Section: D Modular Power Electronics -Conceptmentioning

confidence: 99%

“…The process used to fabricate the quasi-vertical diodes and integrated multipliers consists of initially forming an ohmic contact on highly-doped GaAs, followed by a transfer of the epitaxy whereby the ohmic metal contact is bonded to a host silicon substrate using an intermediate adhesive layer (SU-8 photoresist) [4][5][6]. Because silicon and GaAs suffer from a mismatch in coefficients of thermal expansion (2.6 vs 6.86 ppm/°C), the low temperature bonding achieved by SU-8 (compared to prior approaches employing spin-on glasses, SOG) is preferred.…”

Section: Fabrication Processmentioning

confidence: 99%

Device Packaging

2019

Advancing Microelectronics Magazine

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An Epitaxy Transfer Process for Heterogeneous Integration of Submillimeter-Wave GaAs Schottky Diodes on Silicon Using SU-8

Cited by 14 publications

References 22 publications

Hybrid and heterogeneous photonic integrated near-infrared InGaAs/InAlAs single-photon avalanche diode

Hybrid and heterogeneous photonic integrated near-infrared InGaAs/InAlAs single-photon avalanche diode

A rapid technique to integrate micro-components on released MEMS dies using SU-8

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