2016
DOI: 10.1007/s10470-016-0811-4
|View full text |Cite
|
Sign up to set email alerts
|

An energy-efficient high-speed CMOS hybrid comparator with reduced delay time in 40-nm CMOS process

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
8
0

Year Published

2017
2017
2023
2023

Publication Types

Select...
4
3

Relationship

0
7

Authors

Journals

citations
Cited by 29 publications
(8 citation statements)
references
References 28 publications
0
8
0
Order By: Relevance
“…For typical dark currents of 20 pA at a reverse bias of 5 V, the electrical power needed during the integration and recovery times is on the order of 100 pW per class, or about 1 aJ/inference/class. Additional energy is needed to monitor the detectors, which could be accomplished with high speed comparators, which have subns response times and require ∼100 fJ/conversion. Even with this additional energy cost, the performance compares favorably with conventional neural networks where the best systems currently require ∼10 mJ/inference, with projections to ∼100 μJ/inference. , …”
Section: Resultsmentioning
confidence: 99%
“…For typical dark currents of 20 pA at a reverse bias of 5 V, the electrical power needed during the integration and recovery times is on the order of 100 pW per class, or about 1 aJ/inference/class. Additional energy is needed to monitor the detectors, which could be accomplished with high speed comparators, which have subns response times and require ∼100 fJ/conversion. Even with this additional energy cost, the performance compares favorably with conventional neural networks where the best systems currently require ∼10 mJ/inference, with projections to ∼100 μJ/inference. , …”
Section: Resultsmentioning
confidence: 99%
“…To compare the performance of the proposed circuit with other reported circuits, all the targeted circuit topologies including the conventional double-tail and the circuits reported in [1,11,26] as well as the proposed comparator in this paper are simulated in CNTFET technology under the same simulation conditions, (F ClK = 6 GHz, V DD = 1 V, ΔVin = 0.3 mV and C L = 5 fF). The simulation results are summarised in Table 2 and shown in Figure 10.…”
Section: R On3ð4þ C F Nðf Pþ Dt ð5þmentioning
confidence: 99%
“…In Table 1, a common-mode voltage of 0.7 V is selected for both the proposed comparator and the circuit reported in [1], since they both employ N-Type transistors as the input differential pair in their pre-amplifier stage. Moreover, a common-mode voltage of 0.3 V is applied for the structures reported in [11,26], since they employ a P-Type transistor input differential pair in their pre-amplifier stage. Therefore, the conditions are considered the same for all the comparator circuits.…”
Section: R On3ð4þ C F Nðf Pþ Dt ð5þmentioning
confidence: 99%
See 2 more Smart Citations