2020
DOI: 10.3390/electronics9061013
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An Energy-Efficient and Fast Scheme for Hybrid Storage Class Memory in an AIoT Terminal System

Abstract: Conventional main memory can no longer meet the requirements of low energy consumption and massive data storage in an artificial intelligence Internet of Things (AIoT) system. Moreover, the efficiency is decreased due to the swapping of data between the main memory and storage. This paper presents a hybrid storage class memory system to reduce the energy consumption and optimize IO performance. Phase change memory (PCM) brings the advantages of low static power and a large capacity to a hybrid memory system. I… Show more

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Cited by 18 publications
(9 citation statements)
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“…For a comparison purpose, we additionally simulate a scheme that adds a page to DRAM if a write operation on that page occurs first time and page migration between DRAM and NVM is allowed. We call this scheme migration-allowed, which is a typical scheme used in hybrid memory systems [11,17,27,28]. In the experiments, the ratio of DRAM is varied to 10%, 15%, and 20% of the total main memory capacity.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…For a comparison purpose, we additionally simulate a scheme that adds a page to DRAM if a write operation on that page occurs first time and page migration between DRAM and NVM is allowed. We call this scheme migration-allowed, which is a typical scheme used in hybrid memory systems [11,17,27,28]. In the experiments, the ratio of DRAM is varied to 10%, 15%, and 20% of the total main memory capacity.…”
Section: Resultsmentioning
confidence: 99%
“…Sun et al present a hybrid memory management technique for AIoT (Artificial intelligence Internet of Things) systems [28]. Specifically, they reduce the energy consumption and optimize I/O performance of AIoT systems by migrating write-intensive data from NVM to DRAM.…”
Section: B Hybrid Memory Technologiesmentioning
confidence: 99%
“…In order to meet the ever-increasing demand for computing power and low power of IoT device, high storage density, near zero leakage power NVM (PCM, STT-RAM, RRAM, etc.) has been studied and tried at different levels from external memory to main memory [15,16,17]. These methods of solve the asymmetry of NVM are very valuable.…”
Section: Related Workmentioning
confidence: 99%
“…The main page policies of modern DRAM are the open-page policy (OPP) and the close-page policy (CPP) [16,17]. As an example, the access latency of DDR3-1600 memory in OPP and CPP modes are shown in Table 1.…”
Section: Introductionmentioning
confidence: 99%