An Empirical Defect-Related Photo Leakage Current Model for LTPS TFTs Based on the Unit Lux Current

Tai, Ya‐Hsiang; Kuo, Yan-Fu; Sun, Guo-Pei

doi:10.1109/ted.2010.2044292

Cited by 3 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Si-H bonding in the active layer could therefore be easily broken under light illumination. [29][30][31] Light illumination increased the carrier density in the channel area when the light-induced stress was applied to the TFTs. 32) At the same time, an extended hole-accumulating channel region was formed by the negative bias stress.…”

Section: Poly-simentioning

confidence: 99%

Bias-Temperature- and Light-Induced Instability in Short-Channel (L = 1.5 µm) p-Type Polycrystalline Silicon Thin-Film Transistors on Glass Substrates

Choi

Han

2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We investigated the electrical al characteristics of laser-crystallized polycrystalline silicon thin-film transistors (poly-Si TFTs) under various stresses, such as bias, temperature, and light illumination. The threshold voltage of the short-channel TFTs (L CH = 1.5 µm) was significantly shifted in the negative direction owing to bias temperature stress (ΔV TH = -3.75 V) compared with that found in long-channel TFTs (ΔV TH = -0.32 V) at 100 °C. We also investigated the effects of light illumination on laser-crystallized poly-Si TFTs. In order to improve the reliability of laser-crystallized poly-Si TFTs, we developed a multiple-channel structure fabricated without using any additional processes.

show abstract