Abstract:Avalanche failure that occurs in circuits with inductive loads is an important issue facing silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs). Two mechanisms have been suggested for this failure: the activation of a parasitic bipolar junction transistor (BJT), and the intrinsic operation of SiC at extremely high temperatures. In this study, we propose a SPICE-based electrothermal simulation model of SiC MOSFETs to simulate avalanche behavior. The proposed compact MOSFET model i… Show more
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