1950
DOI: 10.1063/1.1747492
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An Electron Diffraction Study of Structures of Tetramethylorthosilicate, Hexamethyldisiloxane, and Hexachlorodisiloxane

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1951
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Cited by 58 publications
(3 citation statements)
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“…By means of electron diffraction measurements, the Si-O bond distance in siloxane has been shown to be 1.65 A. (7,41). This value was much less than that calculated for a covalent Si-O bond, 1.83 A.…”
Section: Discussion Of Resultsmentioning
confidence: 85%
“…By means of electron diffraction measurements, the Si-O bond distance in siloxane has been shown to be 1.65 A. (7,41). This value was much less than that calculated for a covalent Si-O bond, 1.83 A.…”
Section: Discussion Of Resultsmentioning
confidence: 85%
“…One possible synthesis utilizes the reaction between oxygen and silicon tetrachloride at temperatures between 900–1000 °C [37] . The molecule geometry of this compound has been elucidated by gas phase electron diffraction [38] . Hexachlorodisilathiane, S(SiCl 3 ) 2 , is obtained by high temperature reaction between silicon tetrachloride and hydrogen sulfide, or by the reaction of silver sulfide with trichloroiodosilane or silicon sulfide with chlorine [39,40] …”
Section: Neutral Trichlorosilyl Compounds Of P‐block Elementsmentioning
confidence: 99%
“…. tetramethylorthosilicate (CHaO)4Si(46), and hexamethylcyclotrisiloxane [(CHahSiOla(47) have been determined by electron. diffraction.…”
mentioning
confidence: 99%