An electrochemical technique to deposit thin films of PbTe

Comparative Study on the Properties of Galvanically Deposited Nano- and Microcrystalline Thin Films of PbSe

“…The deposition process exhibits excellent repeatability, as reflected in its use to deposit thin films of various other semiconducting materials. 19,[23][24][25][26] Various physical properties of films deposited from different bath batches were also in good agreement, indicating the usefulness of the reported method.…”

“…Since here the thickness of the deposited PbSe films is much less than 0.25 mm, we have used this correction factor in order to obtain corrected values of resistivity; the values were found to be 16.4 9 10 5 X cm and 11.4 9 10 5 X cm for films obtained from the 25°C and 80°C baths, respectively, of the same order as we have obtained previously for PbTe thin films (another narrow-bandgap semiconductor of this series) deposited on TCO-coated glass substrates. 25 The resistivity was higher for the film deposited at 25°C. Since the average grain size was lower in this case, the number of crystallites per unit volume was higher, which leads to maximum electron scattering from the grain-boundary regions, resulting in lower conductivity.…”

Electrochemical Studies of Lead Telluride Behavior in Acidic Nitrate Solutions

“…Electrochemical deposition of PbTe has been developed since late 1990s [4,5]. Most of the studies have been focused on the electrodeposition of lead telluride from acidic nitrate solutions [6][7][8], but alkaline bath with EDTA as Pb 2+ complexing agent was also proposed [9,10]. In contrary to other technologically and/or economically important tellurides, such as CdTe [11], Ag 2 Te [12] or AuTe 2 [13,14], very little is known on the fundamental electrochemistry of PbTe in aqueous solutions.…”

Preparations and characterizations of polycrystalline PbSe thin films by a thermal reduction method

“…PbSe has a narrow direct band gap of 0.28 eV, a positive temperature coefficient of the gap and a large carrier mobility, which makes it widely applicable to fabrication of infra-red detectors, lightemitting devices, solar cells and more recently as infra-red (IR) laser in fiber optics and thermoelectric devices [4][5][6][7][8]. In addition, PbSe is easier to grow, more stable and homogeneous in chemical composition compared with other IR materials like Cd 1−x Hg x Te [5].…”