CLEO: 2013 Postdeadline 2013
DOI: 10.1364/cleo_si.2013.cth5c.1
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An electrically pumped polariton laser

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Cited by 43 publications
(45 citation statements)
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“…In addition, we exploited the strong relation between delayed and spatiotemporal systems, which allowed us to interpret the temporal F-bits as robust homoclinic kinks of a modified Sine-Gordon equation. Owing to the genericity of our results, we believe that next-generation photonic sources such as quantum cascade 38 or polariton 39 lasers may support F-bits with identical dynamical origin and features and very attractive physical properties.…”
Section: Discussionmentioning
confidence: 70%
“…In addition, we exploited the strong relation between delayed and spatiotemporal systems, which allowed us to interpret the temporal F-bits as robust homoclinic kinks of a modified Sine-Gordon equation. Owing to the genericity of our results, we believe that next-generation photonic sources such as quantum cascade 38 or polariton 39 lasers may support F-bits with identical dynamical origin and features and very attractive physical properties.…”
Section: Discussionmentioning
confidence: 70%
“…Very recently, electrically pumped polariton lasing has also been demonstrated, even though only at cryogenic temperatures and substantial magnetic fields (Fig. B1b and c) 96,97 .…”
Section: Box: Exciton-polariton Lasersmentioning
confidence: 99%
“…The effect of polariton lasing has been shown for different materials [4,5], even up to room temperature in wide bandgap GaN [6], and organic [7][8][9] materials under optical pumping. Furthermore, polariton diodes can be excited electrically in GaAs based vertically emitting microcavities [10][11][12]. It is worth mentioning, that it turned out to be challenging to observe polariton laser operation or condensation effects in GaAs based microcavities with implemented InGaAs quantum wells (QWs).…”
Section: Introductionmentioning
confidence: 99%
“…It is worth mentioning, that it turned out to be challenging to observe polariton laser operation or condensation effects in GaAs based microcavities with implemented InGaAs quantum wells (QWs). However, InGaAs/GaAs QW microcavities bear several significant advantages compared to GaAs/Al(Ga)As QW cavities: a) as discussed in [10][11][12], electrical current injection is much easier due to smaller resistivity of both the doped distributed Bragg reflectors (DBR) and the typically intrinsic cavity; b) the DBRs can be composed of the binary compounds GaAs and AlAs which have the largest possible refractive index difference of the commonly used quasi lattice matched materials on GaAs substrate. Such mirrors are inherently easier to grow, are less afflicted to detrimental roughening, hence allowing to obtain large Q-factors much easier than DBRs based on ternary AlGaAs alloys ; c) the substrate is transparent at the emission frequency, which makes transmission studies straight forward, being particularly appealing in resonant studies; d) compared to GaAs QWs, InGaAs QWs allow for a significantly higher flexibility in the design of the QW bandstructure.…”
Section: Introductionmentioning
confidence: 99%