An Efficient Simulation Methodology to Quantify the Impact of Parameter Fluctuations on the Electrothermal Behavior of Multichip SiC Power Modules

Borghese, Alessandro; Catalano, Antonio Pio; Riccio, Michele; Codecasa, Lorenzo; Fayyaz, Asad; d’Alessandro, V.; Castellazzi, Alberto; Maresca, Luca; Breglio, Giovanni; Irace, Andrea

doi:10.4028/www.scientific.net/msf.963.855

Cited by 14 publications

(4 citation statements)

References 5 publications

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“…It is typically very difficult, if not impossible, to predict how a given set of device characteristics will evolve over time due to stress and so, ultimately, to predict when a device will fail. Therefore, in order to establish suitable de-rating criteria for a given target operational lifetime, it is important to also develop strategies to monitor degradation and impeding failure and respond in a way which ensures soft-fail and non-propagation of the failure at system level [6,7]. In this context, soft-fail or fail-safe mode happens when the DUT fails as a result of a short between gate-source which eventually results in measureable residual gate-source resistance (RGS) of tens of ohms which is usually defined as the drain-source fail-to-open failure mode.…”

Section: Analysis Of Device Parameter Spread: Static Measurementsmentioning

confidence: 99%

Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategy

Boige

Fayyaz

Castellazzi

et al. 2019

2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

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Silicon carbide (SiC) power MOSFETs exhibit some key differences compared with Silicon (Si) MOSFETs and IGBTs. In particular, both their intrinsic (i.e., material technology related) and extrinsic (i.e., device generation related) features-set implies, on the one hand, higher stress levels of the single chip during a short-circuit and, on the other hand, a greater spread in the value of some of the main electro-thermal parameters affecting the transistor performance during this stressful transient event. Thus, this paper proposes a thorough experimental analysis of the short-circuit robustness of parallel connected SiC Power MOSFETs, taking into account the actual distribution in their parameters. The overall aim is twofold: producing de-rating guidelines for multi-chip structures and developing validated strategies for ensuring new and original soft-fail (or fail-safe) modalities in the application, as a result of both single and repetitive pulse degradation.

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Section: Analysis Of Device Parameter Spread: Static Measurementsmentioning

confidence: 99%

Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategy

Boige

Fayyaz

Castellazzi

et al. 2019

2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

Self Cite

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“…11), and the total simulation time was 26 min. Neglecting the effects of the actual cooling system and low thermally conductive interface layers has been exploited in the literature [25], [49] to avoid long transients in ET simulations. Performing thermal simulations in every time step of the electrical domain is not required in practice, since the temperature change during a time step in the circuit domain can be regarded as negligible.…”

Section: A Direct Et Modelingmentioning

confidence: 99%

Circuit-Based Electrothermal Modeling of SiC Power Modules With Nonlinear Thermal Models

Race

Philipp

Nagel

et al. 2022

IEEE Trans. Power Electron.

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Silicon carbide (SiC) power devices have the potential to operate at high temperatures beyond the capabilities of silicon power devices. At increased temperatures, the temperaturedependent material properties of the SiC die and the package multilayer structure can influence the electrothermal (ET) device performance. In this article, a new step-back-correction technique implemented in a finite-difference-method-based thermal modeling tool is proposed to reduce the computational cost while maintaining a good accuracy of ET simulations for multichip power modules. The simulations take the temperature dependence of the thermal conductivity k(T ) and both conduction and switching losses into account. The importance of considering k(T ) for the accurate temperature prediction of SiC power devices is demonstrated for thermal impedance evaluations characterized by high-temperature swings, as well as for a 100-kHz boost converter with low device temperature amplitudes in the steady state. The proposed ET modeling is validated by COMSOL simulations and infrared camera measurements on an example of a custom-designed and custom-manufactured half-bridge SiC power module.

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“…Furthermore, the power modules of the driving converter must ensure high switching frequencies while respecting the physical limitations imposed by the semiconductor devices. The adoption of silicon-carbide (SiC) power switches allows keeping the operating temperature within the safe working region of the devices while running at very high switching frequencies [10], [11].…”

Section: Introductionmentioning

confidence: 99%

Direct Model Predictive Control of Synchronous Reluctance Motor Drives

Riccio

Καραμανάκος

Odhano

et al. 2023

IEEE Trans. on Ind. Applicat.

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This paper investigates a finite-control set modelpredictive control (FCS-MPC) algorithm to enhance the performance of a synchronous reluctance machine drive. Particular emphasis is placed on the definition of the cost function enabling a computationally light implementation while targeting good transient and steady-state performance. In particular, this work proposes the inclusion of an integral term into the cost function to ensure zero steady-state errors thus compensating for any model inaccuracies. A control effort term is also considered in the formulation of the cost function to achieve a high ratio between the sampling frequency and the average switching frequency. After a comprehensive simulation study showing the advantages of the proposed approach over the conventional FCS-MPC for a wide range of operating conditions, several experimental test results are reported. The effectiveness of the proposed control approach, including a detailed analysis of the effect of the load and speed variations, is thus fully verified providing useful guidelines for the design of a direct model predictive controller of synchronous reluctance motor drives.

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An Efficient Simulation Methodology to Quantify the Impact of Parameter Fluctuations on the Electrothermal Behavior of Multichip SiC Power Modules

Cited by 14 publications

References 5 publications

Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategy

Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategy

Circuit-Based Electrothermal Modeling of SiC Power Modules With Nonlinear Thermal Models

Direct Model Predictive Control of Synchronous Reluctance Motor Drives

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