An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering

Abstract

This paper presents a nonlocal model for channel hot electron injection in MOSFETs and nonvolatile memories, which includes a full-band description of optical phonon scattering rates and carrier group velocity. By virtue of its efficient formalism, this model can also include carrier–carrier scattering, which has a marked impact on gate current at low gate voltages. The model is compared against full-band Monte Carlo simulations of typical NOR flash devices in terms of distribution functions, bulk current, gate current, and gate current density along the channel. A very good agreement is obtained for various drain and gate voltages and channel lengths

A RAMS analysis for a precision scale-up configuration of “Smart Street" pilot site: an Industry 4.0 Case Study

“…In the end, the information are sent to a multiswitch that sends them to users who request them [72]- [73]. The failure analysis of the baseline system returned a MTBFTOT equal to 5,483 hours, which is equivalent to about 20 months of operation (with the lamps being active 10 hours per day) [74].…”

Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

“…As such, comprehensive and predictive modeling of HCD is crucial for enabling further development of micro/nanoelectronics. Due to the complexity of the physical mechanisms underlying HCD [4,5], available physics-based models for HCD are computationally expensive [6][7][8][9][10][11]. On the other hand, empirical and phenomenological models [12][13][14][15][16][17][18][19][20][21] lack predictive capabilities because they do not capture the entire physical picture behind HCD.…”

Investigation of Endurance Degradation in a CTF NOR Array Using Charge Pumping Methods

“…The mainstream market is currently dominated by the floating gate (FG) technology in NORtype flash. Yet, the scale down of FG memory device is placed in an extremely dire situation due to the physical limits of gate length and tunneling oxide thickness [2]. In order to replace traditional FG devices, a polysilicon-oxide-nitride-oxide-silicon (SONOS) structure is being developed for commercial applications [3][4][5][6][7][8][9][10].…”