An efficient multiresonant avalanche diode oscillator in the 1.5 to 11 GHz range

Snapp, C.P.; Hoefflinger, B.

doi:10.1109/proc.1968.6786

Cited by 15 publications

(4 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The ionization coefficients for electrons and holes are assumed to be equal and represented by where A=3.9 x IO3 cm-1, and X=5*4 x 10-6 cm V-1. This is in good agreement with experimental data (Logan and Sze 1966) and the approximation of Sze and Gibbons (1966) for field values of interest.…”

Section: A Model For Gaassupporting

confidence: 91%

“…However, Prager et al (1967) have reported a new mode of oscillation in silicon, differing appreciably from the normal IMPATT mode by giving much greater efficiencies ranging up to 43 % and occurring at slightly lower frequencies. Similar results have been obtained for germanium avalanche diodes by Johnston et al (1968) and for silicon by Snapp and Hoefflinger (1968). Theories for highefficiency oscillations have recently been given by Chlorfeine et al (1969) and by DeLoach and Scharfetter (1970) in terms of a rapid avalanche transient which leaves behind a trapped plasma.…”

Section: Introductionsupporting

confidence: 80%

See 1 more Smart Citation

A theory for high-efficiency oscillations in gallium arsenide avalanche diodes

Cottam¹

1970

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

An analytic theory is presented for high-efficiency microwave oscillations in gallium arsenide avalanche diodes by extending an approach similar to that of DeLoach and Scharfetter for silicon, and incorporating realistic approximations for the velocity field profiles and the ionization coefficients of the carriers. In gallium arsenide the electrons have a negative differential mobility over a certain range of electric field values, and this is found to be an important effect necessitating the inclusion of a diffusion mechanism in some cases. The two structures n+-p-p+ and p+-n-n+ differ considerably and are treated separately.The theory enables design and performance criteria to be deduced. Results are obtained for an upper bound to the frequency, the optimum frequency and the peak diode current for a range of different depletion layer widths and doping densities. Also it is found that for a particular doping density there is an upper limit to the width for high-efficiency oscillations to occur. A comparison is made with preliminary experimental results.

show abstract

Section: A Model For Gaassupporting

confidence: 91%

Section: Introductionsupporting

confidence: 80%

A theory for high-efficiency oscillations in gallium arsenide avalanche diodes

Cottam¹

1970

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…While this technology is well developed in Si and GaAs (see e.g. [10][11][12]), GaN-based IMPATT diodes promise to offer exceptional levels of performance. Recent demonstrations of IMPATT-based oscillations have been achieved [13][14][15].…”

Section: Exploitation Of Impact Ionizationmentioning

confidence: 99%

Electric field control and exploitation in III-N devices

Fay,

Duan,

Zhu

et al. 2024

Quantum Sensing and Nano Electronics and Photonics XX

View full text Add to dashboard Cite

Wide (and ultra-wide) bandgap III-N semiconductors are promising for electronic devices operating at high power levels and in harsh environments, as well as for sensors such as UV detectors. The promise of these materials derives from a combination of their excellent carrier transport properties and the ability to operate at high internal electric fields. However, many current-generation devices do not fully exploit the material limits, and thus performance is below the fundamental performance limits expected from the material properties. Recent work on polarization-graded structures for internal electric field mitigation to enhance the breakdown voltage in HEMTs, cost-effective edge termination strategies for vertical power devices, and devices exploiting impact ionization and avalanche in GaN will be discussed. For example, we find that the use of polarization-grading can decrease the peak electric field in the channel, increase the breakdown voltage, and improve the power scaling of III-N based HEMTs, without the use of field plates that limit high-frequency performance; experimentally-validated power-added efficiency of 50% at 94 GHz has been achieved. In vertical devices, device high-field operation is often limited by edge effects; we report a strategy for edge termination that provides a large process window that is tolerant of both fabrication processing and epitaxial layer thickness and doping variations, and enables robust avalanche operation to be achieved in practice. In addition to increased breakdown voltage, the ability to harness impact ionization and avalanche for device functionality is also critical for avalanche photodiodes and negativeresistance oscillators such at IMPATT diodes. We report the recent demonstration of experimentally-measured negative resistance at microwave frequencies from GaN-based IMPATT diodes, illustrating direct exploitation of the high-field operation of GaN pn junctions for advanced functionality. These approaches are amenable to extension to ultra-wide bandgap III-N materials, particularly for applications in quantum sensing and ultra-high power density electronics.

show abstract

“…Avalanche diodes of the Impatt type have been vastly improved in efficiency, with efficiencies up to 40% demonstrated [Johnston and Scharietter, 1968], and operation over three octaves (1.5-11 GHz), with efficiencies in the 3 to 20% range [Snapp and Hoeffiinger, 1968]. Important developments in Gunn devices have included the broad electronic tuning of up to 10% with varactor diodes and octave tuning using a YIG sphere [Omori, 1969] Superconducting tunneling at Josephson junctions has been used for millimeter-wave mixing ] and infrared detection , and this technique has promise for subnanosecond computer switching applications [Matisoo, 1966].…”

Section: [1968b]mentioning

confidence: 99%

Commission 7: Progress in Radio Electronics

Heffner¹,

Siegman²,

Whinnery³

1969

Radio Science

View full text Add to dashboard Cite

The advances of the past 3 years in the science and technology of quantum electronics are well summarized by the technical programs of the May 1968 International Conference on Quantum Electronics, held in Miami [IEEE, 1968a], and of the May 1969 Conference on Laser Engineering and Applications, held in Washington, D. C. [IEEE, 1969a]. The pace of development of new laser devices, new techniques, and new basic quantum electronic phenomena does not seem to be slowing, even though the maser concept has been with us for two decades, and working laser devices for one decade. On the technological side, the development of practical laser applications has obviously reached and passed the take‐off point, with new and different practical applications of lasers emerging at a rapid rate in an almost uncountable number of applications areas.

show abstract

An efficient multiresonant avalanche diode oscillator in the 1.5 to 11 GHz range

Cited by 15 publications

References 2 publications

A theory for high-efficiency oscillations in gallium arsenide avalanche diodes

A theory for high-efficiency oscillations in gallium arsenide avalanche diodes

Electric field control and exploitation in III-N devices

Commission 7: Progress in Radio Electronics

Contact Info

Product

Resources

About