An Efficient Method of Power Spectral Density Estimation for On-Chip IR-UWB Transmitter Self-Calibration

Goavec, Anthony; Zarudniev, Mykhailo; Vauché, R.; Hameau, Frédéric; Gaubert, J.; Mercier, Éric

doi:10.1109/tcsi.2016.2617887

Cited by 7 publications

(4 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Finally, all V a-n are adjusted in order to optimize rejection and also respect FCC requirements. To verify that emitted pulses are well-suited to the targeted bandwidth, or to compensate for spectrum variations generally due to slow phenomenon such as temperature variations, the synthesizer can be controlled by a calibration system as described in [27].…”

Section: A Transmittermentioning

confidence: 99%

A 100 MHz PRF IR-UWB CMOS Transceiver With Pulse Shaping Capabilities and Peak Voltage Detector

Vauché

Muhr

Fourquin

et al. 2017

IEEE Trans. Circuits Syst. I

Self Cite

View full text Add to dashboard Cite

This work presents a high rate IR-UWB transceiver chipset implemented in a 130 nm CMOS technology for WBAN and biomedical applications in the 3.1GHz-4.9GHz band. The transmitter is based on a pulse synthesizer and an analytical upconverted Gaussian pulse is used to predict its settings. Its measured peak to peak output voltage is equal to 0.9Vpp on a 100 load for a central frequency of 4GHz, and a supply voltage of 1.2V, which gives an emitted energy per pulse of 0.64pJ. The receiver is a non-coherent architecture based on a LNA followed by a peak voltage detector. A BER of 10-3 is measured for a 3.1GHz-4.9GHz input peak-to-peak pulse amplitude of 1.1mV which corresponds to a sensitivity of-85.8dBm at 1Mbps and gives a communication range estimated to 1.9m.

show abstract

Section: A Transmittermentioning

confidence: 99%

A 100 MHz PRF IR-UWB CMOS Transceiver With Pulse Shaping Capabilities and Peak Voltage Detector

Vauché

Muhr

Fourquin

et al. 2017

IEEE Trans. Circuits Syst. I

Self Cite

View full text Add to dashboard Cite

show abstract

“…On the contrary of narrow-band devices which use a modulated carrier to perform data transmission, standardized IR-UWB devices use short pulses (less than 5 ns and so leading to a large bandwidth) with a central frequency between 3.1 GHz and 10.6 GHz. This short duration allows UWB pulses to have distinguishable multi-path interferences and also to be robust to multipath fading [4], in addition to allow a real time location with an accuracy of 5 cm [5]. Moreover, IR-UWB allows to duty-cycle transceiver power at the bit scale and presents a power consumption proportional to the data rate (on the contrary of narrow-band devices that have a power consumption independent of the data rate) [6].…”

Section: Introductionmentioning

confidence: 99%

Design of a multi-standard IR-UWB emitter in a 28 nm FD-SOI technology based on the frequency transposition pulse synthesis

Artemio Schoulten,

Vauche,

Gaubert

et al. 2023

JICS

View full text Add to dashboard Cite

Ultra-WideBand Impulse Radio (IR-UWB) is a wireless communication technology well-suited for short range communications (about 10 meters) and has the advantage to allow real-time location with a precision of 5 cm. However, its use has been standardized in some standards and especially in the IEEE 802.15.4 dedicated to Wireless Personnal Area Network (WPAN) and in the IEEE 802.15.6 dedicated to Wireless Body Area Network (WBAN). After presenting requirements of each standard and a literature survey on the IR-UWB emitter, the design of a multi-standard IR-emitter based on the frequency transposition pulse synthesis is proposed in a 28 nm FD-SOI technology. The proposed design has been validated at the transistor level using electrical simulations which take into account the parasitic capacitance at each critical node of the circuit. Moreover, results show that the proposed circuit has the potential to be the first multi-standard IR-UWB emitter which covers every channel of the IEEE 802.15.4 and 802.15.6 standards.

show abstract

“…Moreover, it is possible to produce short time domain pulses with simple and low power architecture. For this reason, the IR-UWB emitters can intrinsically present a low-power consumption which is reinforced by the low authorized power spectral densities that are orders of magnitude lower than mobile communications signals [4], in addition to high bit rate due to the use of short duration pulses.…”

Section: Introductionmentioning

confidence: 99%

Low Power Ultra-Wide Band Pulse Generator based on a Duty-Cycled 2-ASK Emitter

Schoulten

Mariano

Vauché

et al. 2021

2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)

View full text Add to dashboard Cite

This paper presents an ultra-wideband pulse generator based on a duty-cycled 2-ASK emitter able to generate OOK and BPSK modulated carriers. This emitter uses a differential architecture which has been designed in FD-SOI 28 nm CMOS technology with a supply voltage of 1.0 V. It presents a fast enough transient response to entirely cover the 3.1-10.6 GHz FCC band. Moreover, it can be quickly turnedon and turned-off which allow 3 ns pulses to be generated and also, low power impulse communications to be implemented. The emitter is built around a wideband Voltage Controlled Oscillator (VCO) which is able to generate at its outputs large oscillations from 1.0 GHz to 13.9 GHz. When the emitter is used as a 3 ns pulse generator centred on 7987 MHz, its energy consumption is 152.7 pJ/pulse, and the static power consumption is 3.83 μW. This leads to a mean power consumption of 5.36 µW (resp. 19.1 µW and 156 µW) for a pulse repetition frequency of 10 kHz (resp. 100 kHz and 1 MHz), which highlights the interest of impulse modulations for low power radio-frequency communications.

show abstract

An Efficient Method of Power Spectral Density Estimation for On-Chip IR-UWB Transmitter Self-Calibration

Abstract: International audienc

Cited by 7 publications

References 33 publications

A 100 MHz PRF IR-UWB CMOS Transceiver With Pulse Shaping Capabilities and Peak Voltage Detector

A 100 MHz PRF IR-UWB CMOS Transceiver With Pulse Shaping Capabilities and Peak Voltage Detector

Design of a multi-standard IR-UWB emitter in a 28 nm FD-SOI technology based on the frequency transposition pulse synthesis

Low Power Ultra-Wide Band Pulse Generator based on a Duty-Cycled 2-ASK Emitter

Contact Info

Product

Resources

About