Abstract:A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a driftdiffusion model with mobilities deduced by a direct numerical solution of the semiclassical Boltzmann equations for charge transport by a suitable discontinuous Galerkin approach.The critical issue in a graphene field effect transistor is the difficulty of fixing the off state which requires an accurate calibration of the gate voltages. In the present … Show more
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