An effective way to tune the microstructure and dielectric properties of CaCu3Ti4O12 ceramics

Zheng, X. H.; Zhang, C.; Liu, Bing; De-ping, Tang; Huang, Xinjian; Liu, X.L.

doi:10.1016/j.jallcom.2010.06.060

Cited by 21 publications

(9 citation statements)

References 22 publications

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“…Sr-CCTO [18] exhibits current-voltage nonlinearity, for impedance characteristics of grain and grain boundary of CCTO ceramics are apparently adjusted by Sr doping. Dielectric loss effectively decreases when CuF 2 [19] or MnO 2 [20] is added. Rare earth elements such as Eu [21] and La [22] are also found benefit to the dielectric properties especially the frequency stability.…”

Section: Introductionmentioning

confidence: 99%

CaCu3Ti4O12 ceramics from basic co-precipitation (BCP) method: Fabrication and properties

Lu¹,

Wang²,

Zhao³

2011

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

CaCu3Ti4O12 ceramics from basic co-precipitation (BCP) method: Fabrication and properties

Lu¹,

Wang²,

Zhao³

2011

Journal of Alloys and Compounds

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“…The giant dielectric constant rapidly decreases to below 100 with frequency elevating to 1 MHz. This [22]. It is well known that BFO ceramics exhibits low resistivity.…”

Section: Methodsmentioning

confidence: 84%

Decomposition behavior and dielectric properties of Ti-doped BiFeO3 ceramics derived from molten salt method

Zheng

Chen

et al. 2012

J Mater Sci: Mater Electron

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The effects of Ti-doping on the decomposition behavior, crystal structure, sintering behavior and dielectric properties have been investigated for the Ti-doped BiFeO 3 ceramics derived from molten salt method. XRD reveals the almost pure phase BiFeO 3 is synthesized in the Tidoped BiFeO 3 powders. And the particle size of Ti-doped BiFeO 3 powers obviously decreases with the increase of Ti content. However, the sintering temperature elevates significantly after Ti-doping. The DC resistivity can enhance by up to four orders of magnitude (from 10 4 to 10 8 Xm) with only 5 at% Ti doping. But the dielectric constant is suppressed from 10 4 to 10 2 , and dielectric loss obviously reduces with a small amount of Ti doping. The variation of dielectric properties has been discussed from the decomposition of BiFeO 3 phase. The Ti-doping can effectively suppress the decomposition reaction in Ti-doped BiFeO 3 ceramics.

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“…There are appearances of three types of morphologies, which can be categorized as; type A: bimodal distribution of grains, type B: small and homogeneous grain sizes, type C: large and uniform grain distributions. CCTO films, sputtered at lower RF power, has shown bimodal grain distributions and this trend observed up to RF power of 75 W. This may be due to the formation of segregated CuO at the grain boundaries and leads to the nonuniform grain growth [24][25][26]. During annealing of CCTO films (grown at lower RF power) copper was diffused out of the grain boundary and the film surface became rough due to copper-oxide segregation.…”

Section: Methodsmentioning

confidence: 98%

Effect of RF sputtering power on morphological and electrical properties of calcium copper titanate thin films

Tripathy

Das

Ghosh

et al. 2017

J Mater Sci: Mater Electron

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dielectric constant, but these are limited to low temperature applications. Beyond the Curie temperature (T c ) their dielectric properties decreases dramatically, which is undesirable for device applications. Recently, CaCu 3 Ti 4 O 12 (CCTO), possessing a distorted cubic perovskite structure, has received intensive consideration due to its extraordinary dielectric behavior [7]. The dielectric constant of CCTO ceramics is in the order of 10 5 over a broad range of temperature due to its stable cubic structure [8] and also no lattice distortion has been observed in CCTO between this temperature range as confirmed by neutron diffraction and high resolution X-ray diffraction [7,8]. The origin of high permittivity in CCTO is still under debate. High dielectric behavior is the common feature in ferroelectric materials. In case of CCTO, the contribution from dipoles has been ruled out due to its centrosymmetry nature even at low temperature [7,8]. The internal barrier layer mechanism is widely accepted for explanation of giant dielectric permittivity in CCTO, where the conducting grains are separated by insulating grain boundaries [9]. Application of CCTO in microelectronics for memory devices, sensors, capacitor and varistors demands the deposition of CCTO thin films on silicon substrate.Due to the unique dielectric behavior of CCTO bulk ceramics, many research groups have initiated deposition of CCTO thin films by different deposition techniques [10-16] on various types of substrates [17][18][19]. Sputtering is considered as one of the most promising deposition technique for thin film deposition [20]. There are very few reports of deposition of CCTO thin film by RF sputtering [12,21]. Sputtering parameters like RF power, deposition pressure, substrate temperature strongly influence the structural, morphological and electrical properties of thin films. In our previous work [22], we have deposited CCTO thin film with the variation of deposition pressure on silicon Abstract Calcium copper titanate (CCTO) thin films were deposited on p-type silicon substrate by RF magnetron sputtering at various RF powers. Post deposition annealing was carried out for all the samples at 950 °C for 1 h in air atmosphere. Various types of surface morphology have been observed for CCTO thin films with the variation of RF power. The evolution of polycrystalline structure of the CCTO thin films was confirmed by XRD studies. The FTIR characteristic absorption band of CCTO was observed in the range of 400-700 cm −1 . The capacitancevoltage (C-V) and current-voltage (I-V) characteristics of the films were investigated employing Al/CCTO/Si MOS capacitors. CCTO films with higher dielectric constant, lower oxide and interface charge density were obtained at higher RF power. Leakage current was also found to be minimum for RF power of 105 W.

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An effective way to tune the microstructure and dielectric properties of CaCu3Ti4O12 ceramics

Cited by 21 publications

References 22 publications

CaCu3Ti4O12 ceramics from basic co-precipitation (BCP) method: Fabrication and properties

CaCu3Ti4O12 ceramics from basic co-precipitation (BCP) method: Fabrication and properties

Decomposition behavior and dielectric properties of Ti-doped BiFeO3 ceramics derived from molten salt method

Effect of RF sputtering power on morphological and electrical properties of calcium copper titanate thin films

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