Hydrogen-induced doping can be used to create n-doped layers and columns in semiconductor devices. We investigated two techniques to form n-type layers and columns: Proton implantation followed by an annealing step in an inert atmosphere, and helium implantation followed by a hydrogen-plasma treatment. Spreadingresistance measurements and capacitance-voltage measurements were applied to analyze the doping distribution along the implantation direction. Scanning capacitance microscopy and light microscope images after selective etching were used for twodimensional dopant profiling. Finally, we showed that hydrogenrelated donor formation can be successfully applied to create highvoltage superjunction transistors.