An effective single-trap-level model for the proton-induced semi-insulating substrates

Liao, Chungpin; Hsu, Jeng-Shin

doi:10.1109/ted.2005.860635

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2006

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“…Examples of such hydrogen-related donor formation in power devices are the integration of an overvoltage protection function into thyristors (6), the creation of field-stop layers in IGBTs (7) and diodes (8), and n-type columns in superjunction transistors (9). Recent investigations have also focused on proton-induced semi-insulating substrates that can be advantageously applied to already-manufactured mixed-mode integrated-circuit wafers in order to suppress undesirable substrate couplings (10).…”

Section: Introductionmentioning

confidence: 99%

Hydrogen-Related Donor Formation: Fabrication Techniques, Characterization, and Application to High-voltage Superjunction Transistors

et al. 2006

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Hydrogen-induced doping can be used to create n-doped layers and columns in semiconductor devices. We investigated two techniques to form n-type layers and columns: Proton implantation followed by an annealing step in an inert atmosphere, and helium implantation followed by a hydrogen-plasma treatment. Spreadingresistance measurements and capacitance-voltage measurements were applied to analyze the doping distribution along the implantation direction. Scanning capacitance microscopy and light microscope images after selective etching were used for twodimensional dopant profiling. Finally, we showed that hydrogenrelated donor formation can be successfully applied to create highvoltage superjunction transistors.

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Section: Introductionmentioning

confidence: 99%