An effective one-trap-level CAD model for the general SOC integration platform - particle-beam stand (PBS) - when modeling proton-caused local semi-insulating regions
Abstract:~ A s technology (= particle-enhanced isolation) was proposed to employ energetic proton beams on the already-manufactured mixed-mode IC wafers (prior to packaging) for the suppression of undesirable substrate coupling [I]
. However; up to this day the physics behind this proton-caused defect phase is never clear An effective I-level defict model is constructed using experimental results and existing single-trap-level theory [2] and TRIM (or SRIW [3] code-simulated parameters. The found effective single trap l… Show more
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