An effective one-trap-level CAD model for the general SOC integration platform - particle-beam stand (PBS) - when modeling proton-caused local semi-insulating regions

Abstract

~ A s technology (= particle-enhanced isolation) was proposed to employ energetic proton beams on the already-manufactured mixed-mode IC wafers (prior to packaging) for the suppression of undesirable substrate coupling [I] . However; up to this day the physics behind this proton-caused defect phase is never clear An effective I-level defict model is constructed using experimental results and existing single-trap-level theory [2] and TRIM (or SRIW [3] code-simulated parameters. The found effective single trap level (Er) is at about +0.24 eV in n-Si and at -0.34 eV in p-Si, measuring from the center of the energv band-gap.