An edge-defined technique for fabricating submicron metal–semiconductor field effect transistor gates

Strifler, W.A.

doi:10.1116/1.584909

Cited by 4 publications

(3 citation statements)

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“…This technique is hereafter referred to as angle-resolved NSL (AR NSL). Control of the deposition angle has been used previously to produce other nanofabricated surfaces, such as field effect transistors, 86,87 single electron transistors, 88 ultrasmall tunnel junctions, 89,90 and optical coatings. 91 The size and shape of the three-fold interstices of the nanosphere mask change relative to the deposition source as a function of θ dep , and accordingly, the deposited nanoparticles' shape and size is controlled directly by θ dep (Figure 5).…”

Section: Double Layer Periodic Particle Arraysmentioning

confidence: 99%

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Nanosphere Lithography: A Versatile Nanofabrication Tool for Studies of Size-Dependent Nanoparticle Optics

2001

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Nanosphere lithography (NSL) is an inexpensive, simple to implement, inherently parallel, high throughput, materials general nanofabrication technique capable of producing an unexpectedly large variety of nanoparticle structures and well-ordered 2D nanoparticle arrays. This article describes our recent efforts to broaden the scope of NSL to include strategies for the fabrication of several new nanoparticle structural motifs and their characterization by atomic force microscopy. NSL has also been demonstrated to be well-suited to the synthesis of size-tunable noble metal nanoparticles in the 20−1000 nm range. This characteristic of NSL has been especially valuable for investigating the fascinating richness of behavior manifested in size-dependent nanoparticle optics. The use of localized surface plasmon resonance (LSPR) spectroscopy to probe the size-tunable optical properties of Ag nanoparticles and their sensitivity to the local, external dielectric environment (viz., the nanoenvironment) is discussed in detail. More specifically, the effects of nanoparticle size, shape, interparticle spacing, nanoparticle-substrate interaction, solvent, dielectric overlayers, and molecular adsorbates on the LSPR spectrum of Ag nanoparticles are presented. This systematic study of the fundamentals of nanoparticle optics promises to find application in the field of chemical and biological nanosensors; herein, the initial data demonstrate that LSPR spectroscopy of Ag nanoparticles can be used to sense specifically bound analytes with zeptomole per nanoparticle detection limits and no detectable nonspecific binding.

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Section: Double Layer Periodic Particle Arraysmentioning

confidence: 99%

Section: Overview Of Nanoparticle Structural Motifs Accessible By Nan...mentioning

confidence: 99%

Nanosphere Lithography: A Versatile Nanofabrication Tool for Studies of Size-Dependent Nanoparticle Optics

2001

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“…Figure demonstrates how the size, shape, and spacing of the projected nanosphere interstices vary at three representative θ values. Regulating the angle between a substrate and the direction of material deposition has previously been used to produce other nanofabricated surfaces, such as field effect transistors, , single electron transistors, ultrasmall tunnel junctions, , ultrahigh-resolution magnetic force microscopy probes, DNA-based electrical circuits, and optical coatings . Robbie et al have developed a similar technique known as glancing angle deposition (GLAD) to fabricate thin films with controlled porosity.…”

Section: Introductionmentioning

confidence: 99%

Angle-Resolved Nanosphere Lithography: Manipulation of Nanoparticle Size, Shape, and Interparticle Spacing

Haynes¹,

McFarland²,

et al. 2002

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This work presents a novel approach to fine-tuning the size, shape, and interparticle spacing of nanoparticles fabricated by nanosphere lithography (NSL). This approach, termed angle-resolved nanosphere lithography (AR NSL), is a variant of NSL that yields vastly different, and increasingly flexible, nanostructures. This is accomplished by controlling the angle, θ, between the surface normal of the sample assembly and the propagation vector of the material deposition beam. Comparison of experimental results to simulated nanoparticle array geometries generated using an analytical model show excellent qualitative agreement. Using AR NSL, we have demonstrated that it is possible to reduce in-plane nanoparticle dimensions by a factor of 4. This important result shows that it will be possible to achieve fabrication of nanoparticles with precision control of their dimensions in a size regime comparable with the industry standard electron beam lithography. AR NSL provides a massively parallel, rather than serial, nanoparticle fabrication method. One limitation of the AR NSL technique is the inability to pattern an entire substrate with a single nanoparticle geometry without control of the mask domain orientation. While the presence of multiple domains in any given colloidal crystal mask complicates the fabrication of large-area homogeneous nanoparticle arrays, this quality is, in fact, useful in laboratory scale experiments requiring a diverse set of nanostructure features on a single sample. The precision tuning of nanoparticle size, shape, and spacing that can be achieved in a massively parallel, materials/substrate general, and inexpensive fashion using AR NSL is likely to have significant impact on the fields of surface-enhanced spectroscopy, near field optical microscopy, nanoscopic object manipulation, and chemical/biological sensing.

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Shot noise in GaAs metal semiconductor field effect transistors with high gate leakage current

Strifler

Pugh

Remba

1994

Solid-State Electronics

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An edge-defined technique for fabricating submicron metal–semiconductor field effect transistor gates

Cited by 4 publications

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Nanosphere Lithography: A Versatile Nanofabrication Tool for Studies of Size-Dependent Nanoparticle Optics

Nanosphere Lithography: A Versatile Nanofabrication Tool for Studies of Size-Dependent Nanoparticle Optics

Angle-Resolved Nanosphere Lithography: Manipulation of Nanoparticle Size, Shape, and Interparticle Spacing

Shot noise in GaAs metal semiconductor field effect transistors with high gate leakage current

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