An Easy to Use PSPICE Model for Power Transistors in RF Switching Operation and Including Voltage Dependent Output Capacitance

Mediano, Arturo; Molina, P.; Navarro, Jesús

doi:10.1109/arftg.1999.327330

Cited by 7 publications

(2 citation statements)

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“…The exact value of C out is typically not available from the device large signal model in most cases. Second, C out is non-linear and varies with the drain voltage swing as well (16). Third, hybrid class-E amplifier designs are often realized with an un-packaged transistor chip to avoid extra parasitic capacitance which is particularly important for high frequency designs.…”

Section: Class-e Power Amplifier Designmentioning

confidence: 99%

(Invited) An X-Band Class-E Power Amplifier with MEMS Output Impedance Tuner

Yang¹,

Peroulis

Katehi³

2014

ECS Trans.

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This paper presents the design, fabrication and measurements of a hybrid X-band class-E power amplifier with a MEMS output tuner that enables the power amplifier to operate at optimum efficiency and output power level despite the fabrication uncertainties/tolerances of the device and circuit. The tuner is implemented with two 2.8 : 1 analog MEMS varactors and covers an impedance range of resistance between 10 to 30 Ω and reactance of -3 to -9 Ω. The designed PA delivers 605 mW output power with power added efficiency of 52% at 10.5 GHz.

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Section: Class-e Power Amplifier Designmentioning

confidence: 99%

(Invited) An X-Band Class-E Power Amplifier with MEMS Output Impedance Tuner

Yang¹,

Peroulis

Katehi³

2014

ECS Trans.

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“…included in theoretical analysis of the amplifier network but reflects important behavioral aspects that need to be taken into account in the design of these amplifiers (such as tuning shunt capacitance and peak voltage withstood by the device). Furthermore, the model can be used in simulation in switching action without too many cumbersome convergence problems [5].…”

Section: Introductionmentioning

confidence: 99%

Phase shift deskew of oscilloscope current and voltage sensing probes by means of energy balance

Gaudó

Bernal

2008

2008 71st ARFTG Microwave Measurement Conference

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To model losses of active devices in switching operation, such as for example in class E amplifiers, it is of interest to characterize equivalent switching losses in cutoff and conduction. These losses vary with frequency, drain (or collector) current and voltage, among others. Ideally, losses can be estimated by means of power balance. To be able to perform accurate power balance measurements, instant power has to be known and integrated. Recent advances in oscilloscope and current probes, allow timedomain measurements well in the RF and microwave frequency ranges. To obtain reliable results accurate phase shift between current and voltage sensing probes (skew) has to be known for the particular measurement frequency and test-set. This is particularly important when losses are small compared to overall power delivery which is the case of high efficiency power amplifiers and also because, in switching circuits, losses occur by simultaneous presence of voltage and current during conmutation in very short periods of time. This paper proposes a simple adjustment method, also based in power balance. Practical results obtained are consistent and included herein.Index Terms-Class E amplifier, high efficiency, nonlinear modeling, deskew, current and voltage sensing probes, power balance.

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Computer-Aided Design of Switched-Mode Power Amplifiers

Grebennikov¹,

Sokal²

2007

Switchmode RF Power Amplifiers

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An Easy to Use PSPICE Model for Power Transistors in RF Switching Operation and Including Voltage Dependent Output Capacitance

Cited by 7 publications

References 1 publication

(Invited) An X-Band Class-E Power Amplifier with MEMS Output Impedance Tuner

(Invited) An X-Band Class-E Power Amplifier with MEMS Output Impedance Tuner

Phase shift deskew of oscilloscope current and voltage sensing probes by means of energy balance

Computer-Aided Design of Switched-Mode Power Amplifiers

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